18047270. NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Younggul Song of Hwaseong-si (KR)
Eun chu Oh of Hwaseong-si (KR)
Byungchul Jang of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18047270 titled 'NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a non-volatile memory device with a unique structure and features. Here are the bullet points explaining the patent/innovation:
- The device consists of a substrate and a stack structure with two gate layers, one above the other, extending horizontally.
- The stack structure also includes multiple first and second channel structures that penetrate vertically through different channel regions.
- Additionally, there are first and second anti-fuse structures that penetrate vertically through an anti-fuse region of the stack structure.
- The first anti-fuse structure is connected to the first gate layer through a first anti-fuse transistor, while the second anti-fuse structure is connected to the second gate layer through a second anti-fuse transistor.
Potential applications of this technology:
- Non-volatile memory devices are widely used in various electronic devices, such as smartphones, tablets, and computers.
- This innovation could enhance the performance and storage capacity of non-volatile memory devices, leading to improved device functionality and user experience.
Problems solved by this technology:
- Traditional non-volatile memory devices may have limitations in terms of storage capacity and performance.
- This patent addresses these limitations by introducing a unique stack structure and anti-fuse transistors, potentially overcoming previous constraints.
Benefits of this technology:
- The unique stack structure and anti-fuse transistors allow for increased storage capacity and improved performance in non-volatile memory devices.
- This innovation could lead to more efficient and reliable data storage, faster data access, and overall enhanced device performance.
Original Abstract Submitted
A non-volatile memory device includes a substrate, a stack structure that includes a first gate layer that extends in a horizontal direction and a second gate layer that extends in the horizontal direction and is disposed apart from the first gate layer in a vertical direction, a plurality of first channel structures that penetrate in the vertical direction through a first channel region of the stack structure, a plurality of second channel structures that penetrate in the vertical direction through a second channel region of the stack structure, a first anti-fuse structure and a second anti-fuse structure that each penetrate in the vertical direction through an anti-fuse region of the stack structure, a first anti-fuse transistor that is electrically connected to the first gate layer through the first anti-fuse structure, and a second anti-fuse transistor that is electrically connected to the second gate layer through the second anti-fuse structure.
