17847545. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME
Organization Name
Inventor(s)
Joonsuc Jang of Hwaseong-si (KR)
NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17847545 titled 'NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME
Simplified Explanation
The patent application describes a method to reduce read errors in memory cells by grouping them based on their operation environments. Here is a simplified explanation of the abstract:
- Aggressor memory cells connected to aggressor wordlines are grouped into aggressor cell groups based on read operations and grouping read voltages.
- Selected memory cells connected to a selected wordline are grouped into selected cell groups corresponding to the aggressor cell groups.
- Group read conditions are determined for each selected cell group and group read operations are performed based on these conditions.
- The grouping of memory cells into cell groups helps reduce read errors by considering the change in operation environments.
Potential applications of this technology:
- Memory systems: This method can be applied to various memory systems, such as DRAM (Dynamic Random Access Memory) or NAND flash memory, to improve their reliability and reduce read errors.
- Data storage devices: By reducing read errors, this technology can enhance the performance and lifespan of data storage devices like solid-state drives (SSDs) or memory cards.
Problems solved by this technology:
- Read errors: By grouping memory cells based on their operation environments, this method helps mitigate read errors that can occur due to various factors like noise, interference, or variations in operating conditions.
- Reliability: The reduction in read errors improves the overall reliability of memory systems and data storage devices, ensuring accurate data retrieval.
Benefits of this technology:
- Improved data integrity: By reducing read errors, this method ensures the integrity of stored data, minimizing the risk of data corruption or loss.
- Enhanced performance: The reduction in read errors leads to improved performance of memory systems and data storage devices, as it reduces the need for error correction mechanisms and re-reading operations.
- Extended lifespan: By minimizing read errors, this technology can help extend the lifespan of memory cells and devices, as it reduces the wear and tear caused by repeated read attempts.
Original Abstract Submitted
Aggressor memory cells connected to one or more aggressor wordlines are grouped into aggressor cell groups by performing a read operation with respect to the aggressor wordlines based on one or more grouping read voltages, where the aggressor wordlines are adjacent to a selected wordline corresponding to a read address among wordlines of a memory block. Selected memory cells connected to the selected wordline are grouped into a selected cell groups respectively corresponding to the aggressor cell groups. Group read conditions respectively corresponding to the selected cell groups are determined and group read operations are performed with respect to the plurality of selected cell groups based on the group read conditions. The read errors are reduced by grouping the selected memory cells into the selected cell groups according to the change of operation environments.
