METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 18402647 titled 'METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN

Simplified Explanation

The memory device described in the patent application includes a memory array, a reference voltage generator, and a driver circuit. The reference voltage generator generates a reference voltage based on the threshold voltage of a select transistor in the memory cell, while the driver circuit generates bit line and word line voltages based on the reference voltage to drive the memory cell.

Memory device components:

   - Memory array
   - Reference voltage generator
   - Driver circuit

Reference voltage generation:

   - Based on threshold voltage of select transistor
   - Resistor used to sense threshold voltage

Driver circuit operation:

   - Generates bit line and word line voltages
   - Drives memory cell based on reference voltage

Potential Applications

The technology described in this patent application could be applied in: - Solid-state drives - Embedded systems - Consumer electronics

Problems Solved

This technology helps address the following issues: - Efficient memory cell driving - Accurate reference voltage generation

Benefits

The benefits of this technology include: - Improved memory device performance - Enhanced reliability - Reduced power consumption

Potential Commercial Applications

The potential commercial applications of this technology could include: - Memory chip manufacturing - Semiconductor industry - Data storage solutions

Possible Prior Art

One possible prior art for this technology could be: - Memory devices with separate reference voltage generators and driver circuits

Unanswered Questions

How does the resistor accurately sense the threshold voltage of the select transistor?

The resistor is configured to sense the threshold voltage through a current flowing through it, but the exact mechanism of this sensing process is not detailed in the abstract.

What specific types of memory cells are compatible with this memory device?

The abstract does not specify the compatibility of this technology with different types of memory cells, leaving this aspect open for further exploration.

Original Abstract Submitted

A memory device includes a memory array, a reference voltage generator and a driver circuit. The memory array includes a memory cell. The reference voltage generator is configured to generate a reference voltage based on a threshold voltage of a select transistor of the memory cell. The driver circuit is coupled to the reference voltage generator and is configured to generate at least one of a bit line voltage and a word line voltage according to the reference voltage, wherein the memory cell is driven by the at least one of the bit line voltage or the word line voltage, and the reference voltage generator comprises a resistor that is configured to sense the threshold voltage of the select transistor through a current flowing through the resistor.

18402647. METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

Contents

METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN

Organization Name

Inventor(s)