17876346. MEMORY CELL VOLTAGE LEVEL SELECTION simplified abstract (Micron Technology, Inc.)
Contents
MEMORY CELL VOLTAGE LEVEL SELECTION
Organization Name
Inventor(s)
Tingjun Xie of Milpitas CA (US)
Murong Lang of San Jose CA (US)
Jiangli Zhu of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
MEMORY CELL VOLTAGE LEVEL SELECTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17876346 titled 'MEMORY CELL VOLTAGE LEVEL SELECTION
Simplified Explanation
The abstract of the patent application describes a method for managing write and read operations in a quad-level cell (QLC) memory block. Here is a simplified explanation:
- The method involves performing a certain number of write operations on a QLC memory block over a specific time period.
- If the time period exceeds a predetermined threshold, the QLC memory block is designated as a bimodal.
- The method then determines the voltage threshold level of the last successful read operation associated with the QLC memory block.
- Finally, the read threshold level of at least a portion of the QLC memory block is set to the voltage threshold level of the last successful read operation.
Potential Applications:
- This technology can be applied in the field of data storage, particularly in QLC memory blocks used in solid-state drives (SSDs) or other storage devices.
- It can improve the reliability and performance of QLC memory blocks by dynamically adjusting the read threshold level based on the voltage threshold level of successful read operations.
Problems Solved:
- QLC memory blocks can experience degradation and errors over time due to repeated write operations.
- By designating the QLC memory block as a bimodal and adjusting the read threshold level, this method helps mitigate the impact of degradation and errors, improving the overall reliability of the memory block.
Benefits:
- Improved reliability: By setting the read threshold level based on successful read operations, the method ensures accurate data retrieval even in the presence of degradation or errors.
- Enhanced performance: The dynamic adjustment of the read threshold level optimizes the read operations, leading to improved performance of the QLC memory block.
- Extended lifespan: By managing the write and read operations, the method helps prolong the lifespan of the QLC memory block, reducing the need for frequent replacements.
Original Abstract Submitted
A method includes performing, over a time period, a quantity of write operations associated with a quad-level cell (QLC) memory block, determining the time period exceeds a threshold time, designating the QLC memory block as a bimodal, determining a voltage threshold level of a last successful read operation associated with the QLC memory block, and setting a read threshold level of at least a portion of the QLC memory block at the voltage threshold level of the last successful read operation.
