17823191. PARTIAL BLOCK READ VOLTAGE OFFSET simplified abstract (Micron Technology, Inc.)
Contents
PARTIAL BLOCK READ VOLTAGE OFFSET
Organization Name
Inventor(s)
Zhongguang Xu of San Jose CA (US)
Murong Lang of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
Niccolo' Righetti of Boise ID (US)
Nicola Ciocchini of Boise ID (US)
PARTIAL BLOCK READ VOLTAGE OFFSET - A simplified explanation of the abstract
This abstract first appeared for US patent application 17823191 titled 'PARTIAL BLOCK READ VOLTAGE OFFSET
Simplified Explanation
The abstract describes a memory device with a controller that can optimize read operations based on the type of memory block being accessed.
- Memory device includes memory and controller
- Controller receives read command for a memory block
- Controller determines block type
- Controller identifies read voltage offsets based on block type
- Controller performs read operation using the identified voltage offsets
Potential Applications
- Improved performance in memory read operations
- Enhanced efficiency in accessing different types of memory blocks
Problems Solved
- Inefficient read operations in memory devices
- Lack of optimization based on memory block types
Benefits
- Faster read operations
- Better utilization of memory resources
- Enhanced overall performance of memory devices
Original Abstract Submitted
A memory device may include a memory and a controller. The controller may be configured to receive a read command associated with a block of the memory. The controller may be configured to determine a block type associated with the block. The controller may be configured to identify, based on the block type, one or more read voltage offsets for a read operation associated with the block. The controller may be configured to perform the read operation based on the one or more read voltage offsets.
