17852129. NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING simplified abstract (Western Digital Technologies, Inc.)
Contents
NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING
Organization Name
Western Digital Technologies, Inc.
Inventor(s)
NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING - A simplified explanation of the abstract
This abstract first appeared for US patent application 17852129 titled 'NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING
Simplified Explanation
The patent application describes a method to improve the accuracy of reading data stored in memory cells by programming them with tighter threshold voltage distributions. This is achieved by slowing down the programming process as the memory cells approach their target threshold voltage.
- The memory cells are programmed by applying a series of voltage pulses to a selected word line.
- Tighter threshold voltage distributions result in fewer errors when reading the data later.
- To create tighter distributions, the system reduces the effective pulse width of the voltage pulses as the memory cells approach their target threshold voltage.
- The voltage pulses are divided into portions, with each portion corresponding to a subset of the pulse width or time period.
- Memory cells nearing their target threshold voltage are slowed down by inhibiting their programming during later portions of the voltage pulses.
Potential Applications
- Non-volatile memory devices
- Flash memory
- Solid-state drives (SSDs)
- Memory cards
Problems Solved
- Inaccurate reading of data stored in memory cells
- Errors caused by wider threshold voltage distributions
Benefits
- Improved accuracy in reading data
- Reduced errors in data retrieval
- Enhanced reliability of memory devices
Original Abstract Submitted
Memory cells are programmed to threshold voltage distributions that correspond to data states by applying a series of voltage pulses to a selected word line connected to a set of non-volatile memory cells selected for programming. Tighter threshold voltage distributions will result in fewer errors when reading the data at a later time. To create tighter threshold voltage distributions during programming, the system slows down the programming of memory cells as the memory cells approach their target threshold voltage by reducing the effective pulse width of the voltage pulses. The voltage pulses are divided into portions, with each portion corresponding to a subset of the pulse width or a subset of the time period that the voltage pulse is applied. Memory cells that are approaching their target threshold voltage will be slowed down by inhibiting those memory cells from programming during later-in-time portions of the voltage pulses.
