17884107. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES USING SEGMENTATION simplified abstract (Micron Technology, Inc.)
MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES USING SEGMENTATION
Organization Name
Inventor(s)
Mustafa N. Kaynak of San Diego CA (US)
Patrick R. Khayat of San Diego CA (US)
Sivagnanam Parthasarathy of Carlsbad CA (US)
MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES USING SEGMENTATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17884107 titled 'MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES USING SEGMENTATION
Simplified Explanation
The patent application discloses a method for optimizing memory access operations in a memory device by adjusting parameters based on the programming level of memory cells.
- Determining target read window budget (RWB) increase for each wordline based on different PV voltage offsets for programming levels.
- Segmenting wordlines into groups and determining target adjustments for parameters of memory access operations for each group.
- Calculating aggregate RWB increase for the block based on target adjustments.
- Modifying parameters of memory access operations according to target adjustments.
- Potential Applications
- Memory devices
- Data storage systems
- Solid-state drives
- Problems Solved
- Optimizing memory access operations for improved performance
- Enhancing reliability of memory devices
- Increasing efficiency of data storage systems
- Benefits
- Improved memory access speed
- Enhanced data storage performance
- Increased reliability of memory devices
Original Abstract Submitted
Embodiments disclosed can include determining, for a wordline of the plurality of wordlines, a target read window budget (RWB) increase, wherein the target RWB increase corresponds to a maximum RWB increase associated with using a different PV voltage offset for each respective programming level of a memory cell. Embodiments can also include segmenting the plurality of wordlines into one or more wordline groups, wherein each wordline group comprises one or more wordlines. Embodiments can further include determining, for each wordline group, a target adjustment to a parameter of a memory access operation that is performed with respect to a memory cell associated with a wordline of the wordline group. Embodiments can include determining an aggregate RWB increase for the block in view of the target adjustment to the parameter of the memory access operation. Embodiments can further include determining that the aggregate RWB increase for the block satisfies a threshold range associated with the target RWB increase. Embodiments can also include modifying the parameter of the memory access operation according to the target adjustment.
