18183008. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.10.1 How does the placement of the cell string and auxiliary string on opposite sides of the channel layer impact the overall performance of the semiconductor memory device?
- 1.10.2 Are there any potential challenges or limitations associated with implementing this technology in commercial products?
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Jae Woong Kim of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18183008 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the patent application includes a channel layer connected to a bit line, a cell string on one side of the channel layer, and an auxiliary string on the other side of the same channel layer.
- The innovation involves a semiconductor memory device with a unique structure that includes both a cell string and an auxiliary string on opposite sides of the channel layer.
- This design allows for improved memory storage and retrieval capabilities by utilizing both the cell string and auxiliary string in the memory device.
Potential Applications
The technology could be applied in various electronic devices such as smartphones, tablets, laptops, and other computing devices that require high-speed and efficient memory storage.
Problems Solved
This innovation solves the problem of limited memory storage capacity and slow data retrieval speeds in traditional semiconductor memory devices by introducing a novel structure with a cell string and auxiliary string.
Benefits
The benefits of this technology include increased memory storage capacity, faster data retrieval speeds, and improved overall performance of electronic devices that utilize semiconductor memory.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry, particularly in the development of advanced memory devices for consumer electronics and computing devices.
Possible Prior Art
One possible prior art in semiconductor memory devices is the use of multi-level cell (MLC) technology to increase memory storage capacity. However, the specific structure described in this patent application with a cell string and auxiliary string on opposite sides of the channel layer appears to be a novel innovation.
Unanswered Questions
How does the placement of the cell string and auxiliary string on opposite sides of the channel layer impact the overall performance of the semiconductor memory device?
The article does not provide specific details on how the unique structure of the memory device affects its performance compared to traditional memory devices.
Are there any potential challenges or limitations associated with implementing this technology in commercial products?
The article does not address any potential obstacles or drawbacks that may arise when integrating this innovative semiconductor memory technology into mass-produced electronic devices.
Original Abstract Submitted
A semiconductor memory device includes a channel layer coupled to a bit line, a cell string located along a first side portion of the channel layer, and an auxiliary string located along a second side portion of the same channel layer.
