17837345. OPEN BLOCK BOUNDARY GROUP PROGRAMMING FOR NON-VOLATILE MEMORY simplified abstract (Western Digital Technologies, Inc.)

From WikiPatents
Jump to navigation Jump to search

OPEN BLOCK BOUNDARY GROUP PROGRAMMING FOR NON-VOLATILE MEMORY

Organization Name

Western Digital Technologies, Inc.

Inventor(s)

Ke Zhang of Shanghai (CN)

Ming Wang of Shanghai (CN)

Liang Li of Shanghai (CN)

OPEN BLOCK BOUNDARY GROUP PROGRAMMING FOR NON-VOLATILE MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17837345 titled 'OPEN BLOCK BOUNDARY GROUP PROGRAMMING FOR NON-VOLATILE MEMORY

Simplified Explanation

The technology disclosed in this patent application is about programming non-volatile memory, specifically NAND, using open block boundary group programming. This allows for efficient reading of data stored in the group.

  • The memory system determines if programming a group of memory cells will result in an open block.
  • If it will not result in an open block, a first set of programming parameters is used to program the group.
  • If it will result in an open block, a second set of programming parameters is used to program the boundary group.
  • The second set of programming parameters tightens Vt distributions, reducing mis-reads when the boundary group is read.

Potential Applications

  • Non-volatile memory programming, specifically NAND.
  • Data storage and retrieval in electronic devices.

Problems Solved

  • Efficient programming of non-volatile memory.
  • Mitigating mis-reads in boundary groups.

Benefits

  • Improved performance and reliability of non-volatile memory.
  • Reduced mis-reads in boundary groups.


Original Abstract Submitted

Technology is disclosed herein for open block boundary group programming of non-volatile memory such as NAND. The open block boundary group could potentially be read in response to a request from a host for the data stored in the group. In an aspect, the memory system will determine whether programming a group of memory cells in a selected block will result in an open block. If it will not result in an open block, then the memory system uses a first set of programming parameters to program the group. However, if it will result in an open block then the memory system uses a second set of programming parameters to program the boundary group. The programming parameters may include verify levels and/or a program voltage step size. The second set of programming parameters can tighten Vt distributions, which mitigates mis-reads if the boundary group is read.

Retrieved from "http://wikipatents.org/index.php?title=17837345._OPEN_BLOCK_BOUNDARY_GROUP_PROGRAMMING_FOR_NON-VOLATILE_MEMORY_simplified_abstract_(Western_Digital_Technologies,_Inc.)&oldid=18874"