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Category:H01L29/51
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Pages in category "H01L29/51"
The following 98 pages are in this category, out of 98 total.
1
- 17383423. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17383435. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17589953. DIELECTRIC MATERIAL COMPRISING BISMUTH COMPOUND AND METHOD OF MAKING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17589955. DIELECTRIC MATERIAL COMPRISING LEAD COMPOUND AND METHOD OF MAKING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17713014. Semiconductor Device and Method of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17716460. SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
- 17830013. DIELECTRIC ENGINEERED TUNNEL REGION IN MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 17833749. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Micron Technology, Inc.)
- 17851290. Ferroelectric Film with Buffer Layers for Improved Reliability of Metal-Insulator-Metal Capacitor simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17886472. FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17892415. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17897201. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17945528. FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17947071. FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES simplified abstract (Intel Corporation)
- 17958094. TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract (Intel Corporation)
- 17958805. SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17986237. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18056954. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18058791. LAYER STRUCTURES INCLUDING DIELECTRIC LAYER, METHODS OF MANUFACTURING DIELECTRIC LAYER, ELECTRONIC DEVICE INCLUDING DIELECTRIC LAYER, AND ELECTRONIC APPARATUS INCLUDING ELECTRONIC DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18059660. ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18094484. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18100302. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18138192. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18170482. FIELD EFFECT TRANSISTOR WITH ISOLATION STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18171858. THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18182426. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18203877. TECHNIQUES TO MANUFACTURE FERROELECTRIC MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18208943. FERROELECTRIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18235740. Ferroelectric Assemblies and Methods of Forming Ferroelectric Assemblies simplified abstract (Micron Technology, Inc.)
- 18322234. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18338869. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18388419. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18453483. SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN AND METHODS OF FABRICATING SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18459962. NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract (Kioxia Corporation)
- 18468394. THIN FILM STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18487275. ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18493856. SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERROELECTRIC MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18502545. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18506177. EMBEDDED FERROELECTRIC MEMORY CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18507957. SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18513042. ELECTRONIC DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18515912. BOUNDARY DESIGN FOR HIGH-VOLTAGE INTEGRATION ON HKMG TECHNOLOGY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517458. Contacts for Semiconductor Devices and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18522056. SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION simplified abstract (Intel Corporation)
- 18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18523637. NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR DRAIN ETCH FROM REPLACEMENT GATE PROCESS simplified abstract (Intel Corporation)
B
I
- Intel corporation (20240105520). TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240105810). VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240105811). FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION simplified abstract
- Intel corporation (20240105860). LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS simplified abstract
- Intel corporation (20240113128). HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS simplified abstract
- Intel corporation (20240113220). TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract
- Intel Corporation patent applications on April 4th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on January 25th, 2024
- Intel Corporation patent applications on March 28th, 2024
K
S
- Samsung electronics co., ltd. (20240128319). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 14th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240096883). METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240105454). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105850). FINFET STRUCTURE WITH FIN TOP HARD MASK AND METHOD OF FORMING THE SAME simplified abstract
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
U
- US Patent Application 17827755. FERROELECTRIC FIELD EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 18151021. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME simplified abstract
- US Patent Application 18181229. FERROELECTRIC-BASED MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18231772. RADIO FREQUENCY SWITCH simplified abstract
- US Patent Application 18231902. METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18232510. VTFET WITH BURIED POWER RAILS simplified abstract
- US Patent Application 18343972. Semiconductor Devices Including Ferroelectric Memory and Methods of Forming the Same simplified abstract
- US Patent Application 18358609. Method of Forming a Semiconductor Device by Driving Hydrogen into a Dielectric Layer from Another Dielectric Layer simplified abstract
- US Patent Application 18358966. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- US Patent Application 18360804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE simplified abstract
- US Patent Application 18361758. GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE simplified abstract
- US Patent Application 18363881. FUSI GATED DEVICE FORMATION simplified abstract
- US Patent Application 18447153. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18447239. HIGH-K DIELECTRIC MATERIALS WITH DIPOLE LAYER simplified abstract
- US Patent Application 18447453. Ferroelectric Semiconductor Device and Method simplified abstract
- US Patent Application 18447680. TRANSISTOR SPACER STRUCTURES simplified abstract
- US Patent Application 18447685. PARTIAL METAL GRAIN SIZE CONTROL TO IMPROVE CMP LOADING EFFECT simplified abstract