17383423. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Yu-Feng Yin of Hsinchu County (TW)

Chia-Jung Yu of Hsinchu (TW)

Pin-Cheng Hsu of Hsinchu County (TW)

Chung-Te Lin of Tainan City (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17383423 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Simplified Explanation

The abstract describes a semiconductor device that includes a transistor with various components such as a gate electrode, channel layer, gate dielectric layer, source/drain regions, and a spacer.

• The transistor has a gate electrode and a channel layer, with a gate dielectric layer in between.
• There are source/drain regions on opposite sides of the gate electrode, with at least one region having a first and second portion.
• A spacer is placed on the channel layer, specifically on the sidewall of the second portion of the source/drain region, and the first portion is placed on the spacer.

Potential applications of this technology:

• This semiconductor device can be used in various electronic devices such as computers, smartphones, and other consumer electronics.
• It can be utilized in integrated circuits for improved performance and efficiency.

Problems solved by this technology:

• The design of the transistor with the gate electrode, channel layer, and source/drain regions allows for better control of the flow of electrical current.
• The use of the spacer helps in reducing leakage current and improving overall transistor performance.

Benefits of this technology:

• The semiconductor device offers improved performance and efficiency due to better control of current flow.
• It helps in reducing leakage current, which can enhance the overall power efficiency of electronic devices.
• The design allows for smaller and more compact integrated circuits, enabling miniaturization of electronic devices.

Original Abstract Submitted

A semiconductor device includes a transistor. The transistor includes a gate electrode, a channel layer, a gate dielectric layer, a first source/drain region and a second source/drain region and a first spacer. The channel layer is disposed on the gate electrode. The gate dielectric layer is located between the channel layer and the gate electrode. The first source/drain region and the second source/drain region are disposed on the channel layer at opposite sides of the gate electrode, and at least one of the first and second source/drain regions includes a first portion and a second portion between the first portion and the gate electrode. The first spacer is disposed on the channel layer. The first spacer is disposed on a first sidewall of the second portion of the at least one of the first and second source/drain regions, and the first portion is disposed on the first spacer.