18208943. FERROELECTRIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
FERROELECTRIC MEMORY DEVICE
Organization Name
Inventor(s)
Hyuncheol Kim of Suwon-si (KR)
FERROELECTRIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18208943 titled 'FERROELECTRIC MEMORY DEVICE
Simplified Explanation
The abstract describes a ferroelectric memory device that consists of several layers, including a channel layer, a gate insulation layer, and a gate electrode layer. The gate insulation layer contains a ferroelectric inductive layer and a ferroelectric stack structure, which is arranged in a specific order or reverse order of a ferroelectric layer and a non-ferroelectric layer.
- The patent application describes a new type of ferroelectric memory device.
- The device includes a channel layer, gate insulation layer, and gate electrode layer.
- The gate insulation layer contains a ferroelectric inductive layer and a ferroelectric stack structure.
- The ferroelectric stack structure is stacked in a specific order or reverse order of a ferroelectric layer and a non-ferroelectric layer.
Potential applications of this technology:
- Memory devices: The ferroelectric memory device can be used in various memory applications, such as computer systems, smartphones, and other electronic devices.
- Data storage: The device can be utilized for storing and retrieving data in a fast and efficient manner.
- Non-volatile memory: The ferroelectric memory can retain data even when power is turned off, making it suitable for non-volatile memory applications.
Problems solved by this technology:
- Improved memory performance: The ferroelectric memory device offers enhanced performance in terms of read/write speed and data retention.
- Reduced power consumption: The device consumes less power compared to traditional memory technologies, leading to energy savings.
- Increased data storage density: The ferroelectric stack structure allows for higher data storage density, enabling more information to be stored in a smaller space.
Benefits of this technology:
- Faster data access: The ferroelectric memory device provides faster access to stored data, improving overall system performance.
- Lower power requirements: The device's reduced power consumption contributes to energy efficiency and longer battery life in portable devices.
- Compact design: The higher data storage density achieved by the ferroelectric stack structure allows for smaller and more compact memory devices.
Original Abstract Submitted
A ferroelectric memory device includes a channel layer, a gate insulation layer on the channel layer, and a gate electrode layer on the gate insulation layer. The gate insulation layer includes a ferroelectric inductive layer and a ferroelectric stack structure on the ferroelectric inductive layer, and the ferroelectric stack structure is stacked in an order or reverse order of a ferroelectric layer and a non-ferroelectric layer.
