Intel corporation (20240105810). VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

Organization Name

intel corporation

Inventor(s)

Rachel A. Steinhardt of Beaverton OR (US)

Ian Alexander Young of Olympia WA (US)

Dmitri Evgenievich Nikonov of Beaverton OR (US)

Marko Radosavljevic of Portland OR (US)

Matthew V. Metz of Portland OR (US)

John J. Plombon of Portland OR (US)

Raseong Kim of Portland OR (US)

Kevin P. O'brien of Portland OR (US)

Scott B. Clendenning of Portland OR (US)

Tristan A. Tronic of Aloha OR (US)

Dominique A. Adams of Portland OR (US)

Carly Rogan of North Plains OR (US)

Arnab Sen Gupta of Hillsboro OR (US)

Brandon Holybee of Portland OR (US)

Punyashloka Debashis of Hillsboro OR (US)

I-Cheng Tung of Hillsboro OR (US)

Gauri Auluck of Hillsboro OR (US)

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105810 titled 'VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

Simplified Explanation

The patent application describes a transistor device with specific materials and layers to improve performance.

• First source or drain material on a substrate
• Semiconductor material on the first source or drain material
• Second source or drain material on the semiconductor material
• Dielectric layer on the substrate and adjacent the first source or drain material
• Ferroelectric (Fe) material on the dielectric layer and adjacent the semiconductor material
• Gate material on or adjacent to the Fe material
• The Fe material may be a perovskite material with a lattice parameter less than the semiconductor material

Potential Applications

This technology could be applied in advanced electronic devices, such as high-performance transistors, memory devices, and sensors.

Problems Solved

This technology addresses issues related to transistor performance, such as speed, power consumption, and reliability.

Benefits

The use of specific materials and layers can lead to improved transistor performance, potentially enhancing device speed and efficiency.

Potential Commercial Applications

This technology could be valuable in the semiconductor industry for developing next-generation electronic devices with enhanced capabilities.

Possible Prior Art

One possible prior art could be the use of ferroelectric materials in transistors for memory applications, but the specific combination of materials and layers described in this patent application may be novel.

How does this technology compare to existing transistor designs in terms of performance and reliability?

This article does not provide a direct comparison with existing transistor designs to evaluate performance and reliability differences.

What are the potential challenges in scaling up this technology for mass production?

The article does not address the potential challenges in scaling up this technology for mass production, such as manufacturing costs and compatibility with existing fabrication processes.

Original Abstract Submitted

in one embodiment, transistor device includes a first source or drain material on a substrate, a semiconductor material on the first source or drain material, a second source or drain material on the semiconductor material, a dielectric layer on the substrate and adjacent the first source or drain material, a ferroelectric (fe) material on the dielectric layer and adjacent the semiconductor material, and a gate material on or adjacent to the fe material. the fe material may be a perovskite material and may have a lattice parameter that is less than a lattice parameter of the semiconductor material.