17716460. SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Original Abstract Submitted
SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT
Organization Name
Inventor(s)
Jaechul Park of Yongin-si (KR)
Youngkwan Cha of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17716460 titled 'SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT
Simplified Explanation
The abstract describes a semiconductor device that includes multiple layers and regions to enhance its functionality.
- The device consists of a semiconductor layer with a source region and a drain region, which are separated from each other.
- An insulating layer surrounds the semiconductor layer to provide isolation and protection.
- A first gate electrode layer surrounds the insulating layer to control the flow of current.
- A ferroelectric layer is placed on top of the first gate electrode layer to introduce ferroelectric properties.
- A second gate electrode layer is provided on the ferroelectric layer to further control the device's behavior.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as computers, smartphones, and tablets.
- It can be utilized in memory devices, logic circuits, and other integrated circuits.
- The ferroelectric layer enables non-volatile memory, which retains data even when power is lost.
Problems solved by this technology:
- The addition of the ferroelectric layer allows for non-volatile memory, which eliminates the need for constant power supply to retain data.
- The device structure provides improved control over the flow of current, enhancing the overall performance and efficiency.
Benefits of this technology:
- The semiconductor device offers improved functionality and performance compared to traditional devices.
- It enables non-volatile memory, which can enhance the reliability and power efficiency of electronic devices.
- The device structure allows for better control over current flow, leading to improved circuit design and performance.
Original Abstract Submitted
A semiconductor device includes a semiconductor layer extending in a first direction and including a source region and a drain region, which are apart from each other in the first direction; an insulating layer surrounding the semiconductor layer; a first gate electrode layer surrounding the insulating layer; a ferroelectric layer provided on the first gate electrode layer; and a second gate electrode layer provided on the ferroelectric layer.
