FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES

This abstract first appeared for US patent application 17947071 titled 'FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES

Simplified Explanation

The abstract describes a transistor device with specific layers and materials arranged in a particular configuration.

The transistor device includes a gate material layer, a ferroelectric (FE) material layer, a semiconductor channel material layer, and first and second source/drain materials.
The FE material layer is positioned between the gate material and the source/drain materials.
The first source/drain material is adjacent to the semiconductor channel material layer, while the second source/drain material is on the opposite side of the channel material layer.
The FE material layer is divided into two portions, with each portion directly between the gate material and one of the source/drain materials.

Potential Applications

This technology could be applied in:

Advanced electronic devices
Memory storage devices
High-performance computing systems

Problems Solved

This technology helps in:

Improving transistor performance
Enhancing data storage capabilities
Increasing energy efficiency in electronic devices

Benefits

The benefits of this technology include:

Faster data processing speeds
Higher memory density
Lower power consumption in electronic devices

Potential Commercial Applications

The potential commercial applications of this technology could be in:

Semiconductor industry
Electronics manufacturing sector
Research and development organizations

Possible Prior Art

One possible prior art for this technology could be:

Previous patents related to ferroelectric materials in transistor devices

Unanswered Questions

How does this technology compare to existing transistor designs?

This article does not provide a direct comparison to existing transistor designs in terms of performance, efficiency, or cost.

What are the specific manufacturing processes involved in creating this transistor device?

The article does not detail the specific steps or techniques used in manufacturing this transistor device.

Original Abstract Submitted

In one embodiment, a transistor device includes a gate material layer on a substrate, a ferroelectric (FE) material layer on the gate material, a semiconductor channel material layer on the FE material layer, a first source/drain material on the FE material layer and adjacent the semiconductor channel material layer, and a second source/drain material on the FE material layer and adjacent the semiconductor channel material layer and on an opposite side of the semiconductor channel material layer from the first source/drain material. A first portion of the FE material layer is directly between the gate material and the first source/drain material, and a second portion of the FE material layer is directly between the gate material and the second source/drain material.

17947071. FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES simplified abstract (Intel Corporation)

Contents

FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES

Organization Name

Inventor(s)