18094484. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Kwang Soo Seol of Yongin-si (KR)

Chanjin Park of Yongin-si (KR)

Kihyun Hwang of Seongnam-si (KR)

Hanmei Choi of Seoul (KR)

Sunghoi Hur of Seoul (KR)

Wansik Hwang of Hwaseong-si (KR)

Toshiro Nakanishi of Seongnam-si (KR)

Kwangmin Park of Seoul (KR)

Juyul Lee of Seoul (KR)

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18094484 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

Simplified Explanation

The abstract describes a patent application for three-dimensional semiconductor memory devices and methods of fabricating them. These devices consist of an electrode structure with stacked electrodes on a substrate, semiconductor patterns that penetrate the electrode structure, and memory elements that include vertically and horizontally extending patterns.

• The patent application is for three-dimensional semiconductor memory devices and their fabrication methods.
• The devices have an electrode structure with sequentially-stacked electrodes on a substrate.
• Semiconductor patterns penetrate the electrode structure.
• Memory elements consist of a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure.
• The first pattern vertically extends to cross the electrodes.
• The second pattern horizontally extends to cross the semiconductor patterns.

Potential Applications

• Memory devices for electronic devices such as smartphones, tablets, and computers.
• Storage devices for data centers and servers.
• High-performance computing systems that require fast and efficient memory.

Problems Solved

• Increasing demand for higher capacity and faster memory devices.
• Need for more compact and efficient memory solutions.
• Challenges in fabricating three-dimensional semiconductor memory devices.

Benefits

• Increased memory capacity due to the three-dimensional structure.
• Improved performance and speed of data storage and retrieval.
• More efficient use of space, enabling smaller and thinner electronic devices.

Original Abstract Submitted

Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.