18171858. THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
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THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18171858 titled 'THREE-DIMENSIONAL (3D) SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a 3D semiconductor memory device that includes a structure with two conductive pillars, an electrode, a ferroelectric layer, and a channel layer. The ferroelectric layer extends between the conductive pillars and the electrode.
- The 3D semiconductor memory device has a first through-structure with two conductive pillars and an electrode.
- The ferroelectric layer is located between the electrode and the channel layer, extending from one conductive pillar to the other.
- The channel layer connects the two conductive pillars.
- The device is designed to store and retrieve data using the ferroelectric layer.
Potential Applications
- Memory devices for computers, smartphones, and other electronic devices.
- High-density storage devices for data centers and cloud computing.
- Non-volatile memory for automotive and aerospace applications.
Problems Solved
- Increasing the storage capacity of semiconductor memory devices.
- Improving the performance and reliability of memory devices.
- Enabling 3D integration of memory cells for higher density and faster access.
Benefits
- Higher storage capacity due to the 3D structure.
- Faster access times and improved performance.
- Non-volatile memory that retains data even when power is lost.
Original Abstract Submitted
A 3D semiconductor memory device includes a first through-structure on a substrate, the first through-structure comprising first and second conductive pillars spaced apart from each other in a first direction, an electrode adjacent to the first through-structure, the electrode horizontally extending in the first direction, and a ferroelectric layer and a channel layer between the electrode and the first and second conductive pillars. The channel layer connects the first and second conductive pillars to each other. The ferroelectric layer is disposed between the electrode and the channel layer. The ferroelectric layer extends from a sidewall of the first conductive pillar to a sidewall of the second conductive pillar along the channel layer when viewed in a plan view.
