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Category:H01L29/45
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Pages in category "H01L29/45"
The following 94 pages are in this category, out of 94 total.
1
- 17551428. LINER-FREE RESISTANCE CONTACTS AND SILICIDE WITH SILICIDE STOP LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17672033. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17731615. SEMICONDUCTOR DEVICES HAVING STRESSED ACTIVE REGIONS THEREIN THAT SUPPORT ENHANCED CARRIER MOBILITY simplified abstract (Samsung Electronics Co., Ltd.)
- 17832900. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17836399. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17876389. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17877970. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17885577. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886797. SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887487. SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17898416. TRANSPARENT CONDUCTIVE FILM, METHOD OF MANUFACTURING SAME, THIN FILM TRANSISTOR, AND DEVICE INCLUDING SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17936934. METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17957599. VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract (International Business Machines Corporation)
- 18056954. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18085871. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18097249. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151972. HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAINING LAYER AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152976. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18154275. SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18181042. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18234596. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18456927. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18463417. FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND SWITCH CIRCUIT simplified abstract (Huawei Technologies Co., Ltd.)
- 18467258. MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NEXPERIA B.V.)
- 18471715. INTERCONNECTION LAYER STRUCTURES INCLUDING TWO-DIMENSIONAL (2D) MATERIAL, ELECTRONIC DEVICES INCLUDING INTERCONNECTION LAYER STRUCTURES, AND ELECTRONIC APPARATUSES INCLUDING ELECTRONIC DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18481444. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18483058. TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRUCTURES, ELECTRONIC DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE ELECTRONIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18502183. Sacrificial Layer for Semiconductor Process simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18504745. CONTACT PLUGS AND METHODS FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516373. HYBRID CONDUCTIVE STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18516410. FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517565. A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519805. SEMICONDUCTOR STRUCTURES AND METHODS THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18520326. SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521701. SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521913. FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18521931. METAL SOURCE/DRAIN FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
2
B
I
- Intel corporation (20240112916). METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on January 25th, 2024
- International business machines corporation (20240113178). VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract
- International business machines corporation (20240128331). BOTTOM ENHANCED LINER-LESS VIA CONTACT FOR REDUCED MOL RESISTANCE simplified abstract
- International Business Machines Corporation patent applications on April 18th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
K
S
- Samsung electronics co., ltd. (20240105789). SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR simplified abstract
- Samsung electronics co., ltd. (20240120403). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240136416). SEMICONDUCTOR DEVICE simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 11th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240096971). SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096997). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096998). HYBRID CONDUCTIVE STRUCTURES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096999). SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097001). METAL SOURCE/DRAIN FEATURES simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240105787). SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113173). SEMICONDUCTOR STRUCTURES AND METHODS THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113221). FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120381). SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 11th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
U
- US Patent Application 17664712. METHOD AND STRUCTURE FOR FORMING LOW CONTACT RESISTANCE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR simplified abstract
- US Patent Application 17825411. SEMICONDUCTOR DEVICE INCLUDING GRAPHENE BARRIER AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18358152. METHODS OF FORMING SILICIDE CONTACT IN FIELD-EFFECT TRANSISTORS simplified abstract
- US Patent Application 18359070. Low-Resistance Interconnect simplified abstract
- US Patent Application 18359735. DEPOSITION WINDOW ENLARGEMENT simplified abstract
- US Patent Application 18360478. Method of Manufacturing Semiconductor Devices with Multiple Silicide Regions simplified abstract
- US Patent Application 18361262. PROCESS AND STRUCTURE FOR SOURCE/DRAIN CONTACTS simplified abstract
- US Patent Application 18361758. GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGATIVE TRANSCONDUCTANCE simplified abstract
- US Patent Application 18361770. SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES simplified abstract
- US Patent Application 18363350. Different Source/Drain Profiles for N-type FinFETs and P-type FinFETs simplified abstract
- US Patent Application 18363881. FUSI GATED DEVICE FORMATION simplified abstract
- US Patent Application 18365832. Source/Drain Regions and Methods of Forming Same simplified abstract
- US Patent Application 18446557. EMBEDDED BACKSIDE MEMORY ON A FIELD EFFECT TRANSISTOR simplified abstract
- US Patent Application 18447183. SOURCE/DRAIN SILICIDE FOR MULTIGATE DEVICE PERFORMANCE AND METHOD OF FABRICATING THEREOF simplified abstract
- US Patent Application 18449830. SEMICONDUCTOR DEVICE simplified abstract