18502183. Sacrificial Layer for Semiconductor Process simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
Sacrificial Layer for Semiconductor Process
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tsan-Chun Wang of Hsinchu (TW)
Su-Hao Liu of Jhongpu Township (TW)
Liang-Yin Chen of Hsinchu (TW)
Sacrificial Layer for Semiconductor Process - A simplified explanation of the abstract
This abstract first appeared for US patent application 18502183 titled 'Sacrificial Layer for Semiconductor Process
Simplified Explanation
The abstract describes a method of forming a semiconductor device involving the following steps:
- Forming a source/drain region and a gate electrode adjacent to the source/drain region.
- Applying a hard mask over the gate electrode.
- Applying a bottom mask over the source/drain region, leaving the gate electrode exposed.
- Performing a nitridation process on the hard mask over the gate electrode.
- Removing the bottom mask after the nitridation process.
- Forming a silicide over the source/drain region after removing the bottom mask.
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication
Problems Solved: - Improving the performance and reliability of semiconductor devices - Enhancing the efficiency of the manufacturing process
Benefits: - Enhanced electrical properties of the semiconductor device - Increased durability and longevity of the device - Improved overall performance of the device
Original Abstract Submitted
A method of forming a semiconductor device includes forming a source/drain region and a gate electrode adjacent the source/drain region, forming a hard mask over the gate electrode, forming a bottom mask over the source/drain region, wherein the gate electrode is exposed, and performing a nitridation process on the hard mask over the gate electrode. The bottom mask remains over the source/drain region during the nitridation process and is removed after the nitridation. The method further includes forming a silicide over the source/drain region after removing the bottom mask.
