20240047527. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
Inventor(s)
Ronghui Hao of Suzhou City (CN)
King Yuen Wong of Suzhou City (CN)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240047527 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the patent application consists of multiple layers of nitride-based semiconductors, including a first and a second layer, as well as a first p-type doped nitride-based semiconductor layer. The first p-type doped nitride-based semiconductor layer is positioned above the second nitride-based semiconductor layer and has a bottom surface in contact with it. The hydrogen concentration in the first p-type doped nitride-based semiconductor layer gradually decreases from the bottom surface towards the top surface. The device also includes a first electrode on the top surface of the first p-type doped nitride-based semiconductor layer and a second electrode above the second nitride-based semiconductor layer, defining a drift region.
- The patent application describes a semiconductor device with specific layer arrangements and hydrogen concentration gradients.
- The device includes electrodes that enable the control and manipulation of electrical currents.
- The drift region defined by the second electrode allows for efficient charge transport within the device.
Potential Applications
- Power electronics: The semiconductor device can be used in power conversion systems, such as inverters and converters, to efficiently control and convert electrical energy.
- Solid-state lighting: The device can be utilized in light-emitting diodes (LEDs) to enhance their performance and efficiency.
- Wireless communication: The semiconductor device may find applications in high-frequency devices, such as amplifiers and transmitters, for improved signal processing.
Problems Solved
- Improved charge transport: The hydrogen concentration gradient in the first p-type doped nitride-based semiconductor layer enhances the mobility of charge carriers, leading to more efficient device operation.
- Reduced leakage current: The specific layer arrangement and contact between the first p-type doped nitride-based semiconductor layer and the second nitride-based semiconductor layer help minimize leakage currents, improving overall device performance.
- Enhanced device reliability: The design of the semiconductor device reduces the likelihood of device failure and improves its long-term stability.
Benefits
- Higher efficiency: The optimized layer arrangement and hydrogen concentration gradient result in improved charge transport and reduced energy losses, leading to higher overall device efficiency.
- Improved device performance: The reduced leakage current and enhanced charge carrier mobility contribute to better device performance, including faster switching speeds and higher power handling capabilities.
- Increased reliability: The design features of the semiconductor device enhance its reliability and longevity, reducing the need for frequent replacements or repairs.
Original Abstract Submitted
a semiconductor device includes a first and a second nitride-based semiconductor layers, a first p-type doped nitride-based semiconductor layer, a first and a second electrodes. the first p-type doped nitride-based semiconductor layer is disposed above the second nitride-based semiconductor layer and has a bottom surface in contact with the second nitride-based semiconductor layer. the first p-type doped nitride-based semiconductor layer has a hydrogen concentration which decrementally decreases along a direction pointing from the bottom surface toward a top surface of the first p-type doped nitride-based semiconductor layer. the first electrode is disposed on the first p-type doped nitride-based semiconductor layer and in contact with the top surface of the first p-type doped nitride-based semiconductor layer. the second electrode is disposed above the second nitride-based semiconductor layer to define a drift region.
