17551428. LINER-FREE RESISTANCE CONTACTS AND SILICIDE WITH SILICIDE STOP LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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LINER-FREE RESISTANCE CONTACTS AND SILICIDE WITH SILICIDE STOP LAYER

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Nicolas Loubet of Guilderland NY (US)

Christian Lavoie of Pleasantville NY (US)

Adra Carr of Albany NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

LINER-FREE RESISTANCE CONTACTS AND SILICIDE WITH SILICIDE STOP LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 17551428 titled 'LINER-FREE RESISTANCE CONTACTS AND SILICIDE WITH SILICIDE STOP LAYER

Simplified Explanation

The abstract describes a semiconductor device that includes designated source/drain regions on a substrate. The device also has an active source/drain in these regions and a source/drain cap liner on top of the active source/drain. Additionally, the device includes trench silicide regions that are completely filled with a silicide material.

  • The semiconductor device includes designated source/drain regions on a substrate.
  • An active source/drain is present in the designated source/drain regions.
  • A source/drain cap liner is placed on the upper surface of the active source/drain.
  • The device also includes trench silicide regions that are completely filled with a silicide material.

Potential Applications:

  • This semiconductor device can be used in various electronic devices such as smartphones, computers, and tablets.
  • It can be utilized in the manufacturing of integrated circuits and microprocessors.

Problems Solved:

  • The designated source/drain regions and active source/drain help in efficient current flow and control in the semiconductor device.
  • The source/drain cap liner provides protection to the active source/drain and enhances its performance.
  • The trench silicide regions filled with a silicide material improve conductivity and reduce resistance in the device.

Benefits:

  • The semiconductor device offers improved performance and reliability due to the designated source/drain regions and active source/drain.
  • The source/drain cap liner ensures the longevity and stability of the active source/drain.
  • The trench silicide regions filled with a silicide material enhance the conductivity and reduce power consumption in the device.


Original Abstract Submitted

A semiconductor device includes a substrate including designated source or drain (source/drain) regions. An active source/drain is in the designated source/drain regions, and a source/drain cap liner is on an upper surface of the active source/drain. The semiconductor device further includes trench silicide regions completely filed with a silicide material.

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