Taiwan semiconductor manufacturing co., ltd. (20240096999). SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING simplified abstract
Contents
- 1 SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096999 titled 'SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING
Simplified Explanation
The patent application describes a device with a gate stack, gate spacer, source/drain region, silicide, and source/drain contact. The silicide includes a metal and silicon conformal first portion in the source/drain region, and a metal, silicon, and nitrogen conformal second portion over the first portion and on the gate spacer sidewall.
- Gate stack device with advanced silicide technology:
- Gate stack with gate spacer and source/drain region - Silicide with metal and silicon conformal first portion in source/drain region - Conformal second portion with metal, silicon, and nitrogen on gate spacer sidewall
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors and integrated circuits.
Problems Solved
This technology addresses the challenge of improving the performance and reliability of semiconductor devices by enhancing the contact resistance and overall electrical properties of the source/drain regions.
Benefits
The benefits of this technology include increased device performance, reduced power consumption, improved reliability, and enhanced scalability for future semiconductor technologies.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for the production of cutting-edge electronic devices, including smartphones, computers, and other consumer electronics.
Possible Prior Art
One possible prior art could be the use of different silicide materials in semiconductor devices to improve contact resistance and electrical properties. However, the specific combination of metal, silicon, and nitrogen in a conformal silicide structure as described in the patent application may be a novel innovation.
Unanswered Questions
How does the addition of nitrogen in the conformal second portion of the silicide impact the electrical properties of the device?
The patent application mentions the inclusion of nitrogen in the conformal second portion of the silicide, but it does not elaborate on the specific effects of this element on the device's performance.
What are the potential challenges or limitations in implementing this advanced silicide technology in large-scale semiconductor manufacturing processes?
While the patent application highlights the benefits of the technology, it does not discuss any potential obstacles or difficulties that may arise when integrating this innovation into mass production processes.
Original Abstract Submitted
a device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. the silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.
