Kabushiki kaisha toshiba (20240097000). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097000 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract consists of a first nitride region made of aluminum gallium nitride or aluminum nitride, which is an n-type semiconductor, and a second gallium nitride region in contact with the first nitride region. The second gallium nitride region is a metal and contains a first element selected from a group of elements including Be, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, V, Nb, Ta, Li, Na, K, Rb, Ce, and Zn.
- The semiconductor device includes a first nitride region made of aluminum gallium nitride or aluminum nitride, which is an n-type semiconductor.
- A second gallium nitride region in contact with the first nitride region, containing a first element selected from a group of elements including Be, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, V, Nb, Ta, Li, Na, K, Rb, Ce, and Zn.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Optoelectronic devices
- Power electronics
Problems Solved
This technology helps in:
- Enhancing the performance of semiconductor devices
- Improving the efficiency of optoelectronic devices
Benefits
The benefits of this technology include:
- Higher conductivity
- Better thermal stability
- Increased reliability
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- LED lighting industry
- Solar energy sector
- Electric vehicle manufacturing
Possible Prior Art
Prior art related to this technology may include:
- Research on nitride semiconductors
- Studies on gallium nitride-based devices
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices, leaving a gap in understanding the competitive advantages of this technology.
What specific manufacturing processes are required to produce this semiconductor device?
The article does not delve into the detailed manufacturing processes involved in producing this semiconductor device, leaving a question about the practical implementation of the technology.
Original Abstract Submitted
a semiconductor device of an embodiment includes a first nitride region being nitride selected from aluminum gallium nitride and aluminum nitride, the first nitride region being an n-type semiconductor, and a second gallium nitride region in contact with the first nitride region, the second gallium nitride region being the nitride, the second gallium nitride region being metal, the second gallium nitride region containing a first element being at least one element selected from a group consisting of be, mg, ca, sr, ba, sc, y, la, ce, pr, nd, pm, sm, eu, gd, tb, dy, ho, er, tm, yb, lu, v, nb, ta, li, na, k, rb, ce, and zn.
