US Patent Application 18447183. SOURCE/DRAIN SILICIDE FOR MULTIGATE DEVICE PERFORMANCE AND METHOD OF FABRICATING THEREOF simplified abstract

SOURCE/DRAIN SILICIDE FOR MULTIGATE DEVICE PERFORMANCE AND METHOD OF FABRICATING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chih-Ching Wang of Kinmen County (TW)]]

[[Category:Chung-I Yang of Hsinchu (TW)]]

[[Category:Jon-Hsu Ho of New Taipei City (TW)]]

[[Category:Wen-Hsing Hsieh of Hsinchu City (TW)]]

[[Category:Chung-Wei Wu of Hsin-Chu County (TW)]]

[[Category:Zhiqiang Wu of Hsinchu County (TW)]]

SOURCE/DRAIN SILICIDE FOR MULTIGATE DEVICE PERFORMANCE AND METHOD OF FABRICATING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447183 titled 'SOURCE/DRAIN SILICIDE FOR MULTIGATE DEVICE PERFORMANCE AND METHOD OF FABRICATING THEREOF

Simplified Explanation

The patent application describes a new type of source/drain silicide that can improve the performance of electronic devices.

• The device includes multiple layers, including a first channel layer, a second channel layer, and a gate stack.
• The source/drain feature is located next to the first and second channel layers and the gate stack.
• The first and second facets of the channel layers have a specific crystallographic orientation.
• An inner spacer is placed between the gate stack and the source/drain feature, as well as between the first and second channel layers.
• A silicide feature is added on top of the source/drain feature, extending into it towards the substrate to a specific depth.

Original Abstract Submitted

Source/drain silicide that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a first channel layer disposed over a substrate, a second channel layer disposed over the first channel layer, and a gate stack that surrounds the first channel layer and the second channel layer. A source/drain feature disposed adjacent the first channel layer, second channel layer, and gate stack. The source/drain feature is disposed over first facets of the first channel layer and second facets of the second channel layer. The first facets and the second facets have a (111) crystallographic orientation. An inner spacer disposed between the gate stack and the source/drain feature and between the first channel layer and the second channel layer. A silicide feature is disposed over the source/drain feature where the silicide feature extends into the source/drain feature towards the substrate to a depth of the first channel layer.