18181042. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18181042 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract consists of a first nitride region made of aluminum gallium nitride or aluminum nitride, which is an n-type semiconductor, and a second gallium nitride region in contact with the first nitride region. The second gallium nitride region is a metal and contains a first element selected from a group of elements including Be, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, V, Nb, Ta, Li, Na, K, Rb, Ce, and Zn.
- The semiconductor device includes a first nitride region made of aluminum gallium nitride or aluminum nitride, which is an n-type semiconductor.
- The device also contains a second gallium nitride region in contact with the first nitride region, which is a metal and contains a first element selected from a group of elements.
Potential Applications
The technology described in this patent application could potentially be used in:
- Semiconductor devices
- Optoelectronic devices
- Power electronics
Problems Solved
This technology helps in:
- Improving the performance of semiconductor devices
- Enhancing the efficiency of optoelectronic devices
- Increasing the reliability of power electronics
Benefits
The benefits of this technology include:
- Higher efficiency
- Improved performance
- Enhanced reliability
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Electronics industry
- Semiconductor manufacturing companies
- Optoelectronics companies
Possible Prior Art
One possible prior art for this technology could be the use of similar nitride regions in semiconductor devices for improving their performance and efficiency.
Unanswered Questions
How does the integration of the first nitride region with the second gallium nitride region impact the overall performance of the semiconductor device?
The interaction between the different regions of the semiconductor device and its effect on performance could be further explored through experimental testing and analysis.
What specific applications within the optoelectronics industry could benefit the most from this technology?
Identifying the specific areas within the optoelectronics industry where this technology can have the most significant impact would help in targeting potential markets more effectively.
Original Abstract Submitted
A semiconductor device of an embodiment includes a first nitride region being nitride selected from aluminum gallium nitride and aluminum nitride, the first nitride region being an n-type semiconductor, and a second gallium nitride region in contact with the first nitride region, the second gallium nitride region being the nitride, the second gallium nitride region being metal, the second gallium nitride region containing a first element being at least one element selected from a group consisting of Be, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, V, Nb, Ta, Li, Na, K, Rb, Ce, and Zn.
