US Patent Application 18361770. SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES simplified abstract
Contents
SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Cheng-Wei Chang of Hsinchu (TW)
Yu-Ming Huang of Tainan City (TW)
Ken-Yu Chang of Hsinchu City (TW)
Yi-Ying Liu of Hsinchu City (TW)
SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361770 titled 'SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES
Simplified Explanation
The patent application describes a semiconductor device with specific layers and materials.
- The device includes a substrate and two semiconductor fins protruding from the substrate.
- An epitaxial feature connects the two semiconductor fins.
- A silicide layer is placed over the epitaxial feature.
- A barrier layer, made of a metal nitride, is placed over the silicide layer.
- A metal layer is placed over the barrier layer.
- The atomic ratio of oxygen to metal nitride at the boundary between the barrier layer and the metal layer is between 0.15 and 1.0.
Original Abstract Submitted
A semiconductor device includes a substrate, two semiconductor fins protruding from the substrate, an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins, a silicide layer over the epitaxial feature, a barrier layer over the silicide layer, and a metal layer over the barrier layer. The barrier layer includes a metal nitride. Along a boundary between the barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.
