Taiwan semiconductor manufacturing co., ltd. (20240096971). SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chang-Miao Liu of Hsinchu City (TW)
Ying-Keung Leung of Hsinchu City (TW)
Huiling Shang of Hsinchu City (TW)
Youbo Lin of Ridgefield CT (US)
SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096971 titled 'SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a method for forming a silicide on a semiconductor material in a device with a gate structure and a source/drain feature. Here are the key points of the innovation:
- Device includes gate structure and source/drain feature
- Insulating layer (e.g., CESL, ILD) formed over source/drain feature
- Trench etched in insulating layer to expose surface of source/drain feature
- Semiconductor material formed in etched trench on surface of source/drain feature
- Semiconductor material converted to a silicide
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This technology solves the problem of efficiently forming a silicide on a semiconductor material in a device with a gate structure and a source/drain feature.
Benefits
The benefits of this technology include improved performance and reliability of semiconductor devices, as well as potentially reducing manufacturing costs.
Potential Commercial Applications
The technology could have commercial applications in the semiconductor industry, particularly in the production of high-performance electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of different methods for forming silicides on semiconductor materials in semiconductor devices.
Unanswered Questions
How does this technology compare to existing methods for forming silicides on semiconductor materials?
This article does not provide a direct comparison between this technology and existing methods for forming silicides on semiconductor materials. Further research or analysis would be needed to determine the advantages and disadvantages of this new method.
What are the specific performance improvements that can be expected from using this technology in semiconductor devices?
The article does not specify the exact performance improvements that can be expected from using this technology in semiconductor devices. Additional testing or data analysis would be required to quantify the performance enhancements.
Original Abstract Submitted
a method including providing a device including a gate structure and a source/drain feature adjacent to the gate structure. an insulating layer (e.g., cesl, ild) is formed over the source/drain feature. a trench is etched in the insulating layer to expose a surface of the source/drain feature. a semiconductor material is then formed in the etched trench on the surface of the source/drain feature. the semiconductor material is converted to a silicide.
