18517565. A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Cheng-Yen Yu of New Taipei City (TW)
Yueh-Chun Lai of Taichung City (TW)
A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18517565 titled 'A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device with a Fin FET, involving the formation of a fin structure, isolation insulating layer, gate structure, fin mask layer, and epitaxial source/drain structure.
- Formation of a fin structure extending in a first direction over a substrate.
- Formation of an isolation insulating layer exposing an upper portion of the fin structure.
- Formation of a gate structure crossing the first direction over a part of the fin structure.
- Formation of a fin mask layer on sidewalls of a source/drain region of the fin structure.
- Recessing the source/drain region of the fin structure.
- Using a plasma process combining etching and deposition processes to form a recess with a rounded corner shape in a cross-section along the second direction.
Potential Applications
- Semiconductor manufacturing industry
- Electronic devices such as smartphones, tablets, and computers
Problems Solved
- Improving performance and efficiency of semiconductor devices
- Enhancing the functionality of electronic devices
Benefits
- Increased speed and performance of electronic devices
- Reduction in power consumption
- Enhanced overall functionality and reliability of semiconductor devices.
Original Abstract Submitted
In a method of manufacturing a semiconductor device including a Fin FET, a fin structure extending in a first direction is formed over a substrate. An isolation insulating layer is formed over the substrate so that an upper portion of the fin structure is exposed from the isolation insulating layer. A gate structure extending in a second direction crossing the first direction is formed over a part of the fin structure. A fin mask layer is formed on sidewalls of a source/drain region of the fin structure. The source/drain region of the fin structure is recessed. An epitaxial source/drain structure is formed over the recessed fin structure. In the recessing the source/drain region of the fin structure, a plasma process combining etching and deposition processes is used to form a recess having a rounded corner shape in a cross section along the second direction.
