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Category:H01L29/08
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Pages in category "H01L29/08"
The following 120 pages are in this category, out of 331 total.
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- International Business Machines Corporation patent applications on February 29th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on February 8th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
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- Samsung electronics co., ltd. (20240096956). INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096960). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240096995). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240105717). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240105773). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240105776). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240113110). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240120400). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240128321). SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract
- Samsung electronics co., ltd. (20240130127). SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240136354). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240138137). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240162293). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240162323). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240164081). SEMICONDUCTOR DEVICE AND STACK OF SEMICONDUCTOR CHIPS simplified abstract
- Samsung electronics co., ltd. (20240178293). SEMICONDUCTOR DEVICE simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 14th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 30th, 2024
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- Taiwan semiconductor manufacturing co., ltd. (20240096710). INTEGRATED CIRCUIT DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096958). SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096961). Source/Drain Metal Contact and Formation Thereof simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096979). SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097034). METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240098959). FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128376). METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240162290). INTEGRATED CHIP AND METHOD OF FORMING THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240162308). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF simplified abstract
- Taiwan Semiconductor manufacturing Co., Ltd. patent applications on April 18th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on May 16th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240105516). ASYMMETRIC SOURCE/DRAIN EPITAXY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105725). CFET WITH ASYMMETRIC SOURCE/DRAIN FEATURES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105775). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105787). SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105805). SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105850). FINFET STRUCTURE WITH FIN TOP HARD MASK AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240112958). CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113099). INTEGRATED CIRCUIT PROTECTION DEVICE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113113). Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113172). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113173). SEMICONDUCTOR STRUCTURES AND METHODS THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113202). Low-K Gate Spacer and Methods for Forming the Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113203). SPACER FORMATION METHOD FOR MULTI-GATE DEVICE AND STRUCTURES THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113221). FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113225). SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120203). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120381). SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240120414). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136397). HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178069). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178216). SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178271). INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 30th, 2024
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- US Patent Application 17664712. METHOD AND STRUCTURE FOR FORMING LOW CONTACT RESISTANCE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR simplified abstract
- US Patent Application 17804751. GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 17816435. TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY simplified abstract
- US Patent Application 17824249. SEMICONDUCTOR DEVICE STRUCTURE WITH SOURCE/DRAIN STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- US Patent Application 17824915. EPITAXIAL SOURCE/DRAIN STRUCTURE WITH HIGH DOPANT CONCENTRATION simplified abstract
- US Patent Application 17825440. METHOD OF FORMING SEMICONDUCTOR MEMORY DEVICE simplified abstract
- US Patent Application 17826298. METHODS FOR DOPING SEMICONDUCTORS IN TRANSISTORS simplified abstract
- US Patent Application 18100233. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- US Patent Application 18117262. SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18155532. INTEGRATED CIRCUIT DEVICES simplified abstract
- US Patent Application 18200135. SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18227744. GATE STRUCTURES FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18228139. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH TIGHT VERTICAL SPACING simplified abstract
- US Patent Application 18232191. Gate Spacers In Semiconductor Devices simplified abstract
- US Patent Application 18232289. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18338759. Fin Field Effect Transistor (FinFET) Device and Method for Forming the Same simplified abstract
- US Patent Application 18346020. POST-FORMATION MENDS OF DIELECTRIC FEATURES simplified abstract
- US Patent Application 18346511. SOURCE/DRAIN REGIONS OF FINFET DEVICES AND METHODS OF FORMING SAME simplified abstract
- US Patent Application 18350838. Doping for Semiconductor Device with Conductive Feature simplified abstract
- US Patent Application 18352133. Hybrid Channel Semiconductor Device and Method simplified abstract
- US Patent Application 18358112. Semiconductor Device and Method simplified abstract
- US Patent Application 18358609. Method of Forming a Semiconductor Device by Driving Hydrogen into a Dielectric Layer from Another Dielectric Layer simplified abstract
- US Patent Application 18360478. Method of Manufacturing Semiconductor Devices with Multiple Silicide Regions simplified abstract
- US Patent Application 18361185. IC INCLUDING STANDARD CELLS AND SRAM CELLS simplified abstract
- US Patent Application 18361354. FinFETs With Epitaxy Regions Having Mixed Wavy and Non-Wavy Portions simplified abstract
- US Patent Application 18361770. SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES simplified abstract
- US Patent Application 18363350. Different Source/Drain Profiles for N-type FinFETs and P-type FinFETs simplified abstract
- US Patent Application 18363881. FUSI GATED DEVICE FORMATION simplified abstract
- US Patent Application 18366297. Nanowire Stack GAA Device with Inner Spacer and Methods for Producing the Same simplified abstract
- US Patent Application 18366562. Dual Channel Gate All Around Transistor Device and Fabrication Methods Thereof simplified abstract
- US Patent Application 18446094. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- US Patent Application 18446998. Optimized Proximity Profile for Strained Source/Drain Feature and Method of Fabricating Thereof simplified abstract
- US Patent Application 18447855. SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME simplified abstract