US Patent Application 18366562. Dual Channel Gate All Around Transistor Device and Fabrication Methods Thereof simplified abstract

Dual Channel Gate All Around Transistor Device and Fabrication Methods Thereof

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Wei-Sheng Yun of Taipei City (TW)

Chih-Hao Wang of Hsinchu County (TW)

Jui-Chien Huang of Hsinchu City (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Chih-Chao Chou of Hsinchu (TW)

Chun-Hsiung Lin of Hsinchu County (TW)

Pei-Hsun Wang of Hsinchu (TW)

Dual Channel Gate All Around Transistor Device and Fabrication Methods Thereof - A simplified explanation of the abstract

This abstract first appeared for US patent application 18366562 titled 'Dual Channel Gate All Around Transistor Device and Fabrication Methods Thereof

Simplified Explanation

The patent application describes a semiconductor structure with a fin on a substrate, consisting of vertically stacked channels made of germanium.

• The fin has a channel region with multiple channels, and a gate stack and gate spacers are used to control the flow of current.
• Each channel has a middle section wrapped around by the gate stack and two end sections engaged by the gate spacers.
• The concentration of germanium in the middle section is higher than in the end sections.
• The middle section of the channel has a core portion and an outer portion with a germanium concentration profile.

Original Abstract Submitted

A semiconductor structure includes a fin disposed on a substrate, the fin including a channel region comprising a plurality of channels vertically stacked over one another, the channels comprising germanium distributed therein. The semiconductor structure further includes a gate stack engaging the channel region of the fin and gate spacers disposed between the gate stack and the source and drain regions of the fin, wherein each channel of the channels includes a middle section wrapped around by the gate stack and two end sections engaged by the gate spacers, wherein a concentration of germanium in the middle section of the channel is higher than a concentration of germanium in the two end sections of the channel, and wherein the middle section of the channel further includes a core portion and an outer portion surrounding the core portion with a germanium concentration profile from the core portion to the outer portion.