Taiwan semiconductor manufacturing co., ltd. (20240096710). INTEGRATED CIRCUIT DEVICE simplified abstract

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INTEGRATED CIRCUIT DEVICE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Wen-Hsien Tu of New Taipei City (TW)

Dong-Jie Ke of Taichung City (TW)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096710 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation

The integrated circuit device described in the abstract includes a semiconductor substrate with first and second semiconductor fins, as well as first and second epitaxy structures on the respective fins. The first epitaxy structure merges with the second epitaxy structure, and the bottom surface of the second epitaxy structure is lower than the bottom surface of the first epitaxy structure.

  • Semiconductor substrate with first and second semiconductor fins
  • First and second epitaxy structures on the respective fins
  • Merging of the first and second epitaxy structures
  • Lower bottom surface of the second epitaxy structure compared to the first epitaxy structure

Potential Applications

The technology described in the patent application could be applied in the following areas:

  • Semiconductor manufacturing
  • Integrated circuit design
  • Electronics industry

Problems Solved

This technology helps address the following issues:

  • Enhancing semiconductor performance
  • Improving integrated circuit efficiency
  • Increasing device reliability

Benefits

The integrated circuit device offers the following benefits:

  • Higher performance capabilities
  • Enhanced functionality
  • Improved overall device quality

Potential Commercial Applications

The technology could be utilized in various commercial applications, including:

  • Mobile devices
  • Computer systems
  • Automotive electronics

Possible Prior Art

One possible prior art in this field is the use of epitaxy structures in semiconductor devices to enhance performance and functionality.

Unanswered Questions

How does this technology impact power consumption in electronic devices?

This article does not delve into the specific effects of the integrated circuit device on power consumption in electronic devices. Further research and analysis would be needed to determine the extent of this impact.

What are the potential cost implications of implementing this technology in semiconductor manufacturing?

The article does not address the potential cost implications of integrating this technology into semiconductor manufacturing processes. A cost-benefit analysis would be necessary to evaluate the economic feasibility of widespread adoption.


Original Abstract Submitted

an integrated circuit device is provided. the integrated circuit device includes a semiconductor substrate, first and second semiconductor fins over the semiconductor substrate, and first and second epitaxy structures respectively on the first and second semiconductor fins. the first epitaxy structure is merged with the second epitaxy structure, and a bottom surface of the second epitaxy structure is lower than a bottom surface of the first epitaxy structure.