US Patent Application 18346020. POST-FORMATION MENDS OF DIELECTRIC FEATURES simplified abstract
Contents
POST-FORMATION MENDS OF DIELECTRIC FEATURES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wan-Yi Kao of Hsinchu County (TW)
Yung-Cheng Lu of Hsinchu City (TW)
Che-Hao Chang of Hsinchu City (TW)
Chi On Chui of Hsinchu City (TW)
Hung Cheng Lin of Hsinchu (TW)
POST-FORMATION MENDS OF DIELECTRIC FEATURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18346020 titled 'POST-FORMATION MENDS OF DIELECTRIC FEATURES
Simplified Explanation
- The patent application describes semiconductor structures and a method of forming them. - One example of a semiconductor structure includes two source/drain features and a hybrid fin between them. - The hybrid fin extends lengthwise in a specific direction. - The hybrid fin consists of an inner feature and an outer layer. - The outer layer is made of silicon oxycarbonitride. - The inner feature is made of silicon carbonitride.
Original Abstract Submitted
The present disclosure provides embodiments of semiconductor structures and method of forming the same. An example semiconductor structure includes a first source/drain feature and a second source/drain feature and a hybrid fin disposed between the first source/drain feature and the second source/drain feature and extending lengthwise along a first direction. The hybrid fin includes an inner feature and an outer layer disposed around the inner feature. The outer layer includes silicon oxycarbonitride and the inner feature includes silicon carbonitride.
