Taiwan semiconductor manufacturing company, ltd. (20240112958). CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF simplified abstract
Contents
- 1 CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu County (TW)
Kai-Hsuan Lee of Hsinchu City (TW)
CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240112958 titled 'CONTACT AIR GAP FORMATION AND STRUCTURES THEREOF
Simplified Explanation
The method described in the patent application involves forming an air gap spacer in a device by depositing a sacrificial layer, removing a portion of it to expose a source/drain structure, forming a metal plug over the exposed structure, removing the remaining sacrificial layer to create an air gap, and depositing a seal layer over the air gap.
- Transistor with gate and source/drain structures
- Formation of a cavity along a contact opening sidewall
- Deposition of sacrificial layer over contact opening
- Removal of sacrificial layer to expose source/drain structure
- Formation of metal plug over exposed structure
- Removal of remaining sacrificial layer to create air gap
- Deposition of seal layer over air gap
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors and integrated circuits.
Problems Solved
This technology solves the problem of reducing parasitic capacitance in semiconductor devices, which can improve their performance and energy efficiency.
Benefits
The main benefit of this technology is the creation of an air gap spacer, which can help in reducing interference and improving the overall performance of the device.
Potential Commercial Applications
One potential commercial application of this technology could be in the production of next-generation smartphones, tablets, and other electronic devices that require high-performance semiconductor components.
Possible Prior Art
One possible prior art for this technology could be the use of sacrificial layers in semiconductor manufacturing processes to create air gaps and reduce parasitic capacitance.
Original Abstract Submitted
a method of forming a device includes providing a transistor having a gate structure and a source/drain structure adjacent to the gate structure. a cavity is formed along a sidewall surface of a contact opening over the source/drain structure. after forming the cavity, a sacrificial layer is deposited over a bottom surface and along the sidewall surface of the contact opening including within the cavity. a first portion of the sacrificial layer along the bottom surface of the contact opening is removed to expose a portion of the source/drain structure. a metal plug is then formed over the portion of the exposed source/drain structure. a remaining portion of the sacrificial layer is removed to form an air gap disposed between the metal plug and the gate structure. thereafter, a seal layer is deposited over the air gap to form an air gap spacer.
