Taiwan semiconductor manufacturing company, ltd. (20240113099). INTEGRATED CIRCUIT PROTECTION DEVICE AND METHOD simplified abstract

INTEGRATED CIRCUIT PROTECTION DEVICE AND METHOD

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chia-Lin Hsu of Hsinchu (TW)

Yu-Ti Su of Hsinchu (TW)

INTEGRATED CIRCUIT PROTECTION DEVICE AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113099 titled 'INTEGRATED CIRCUIT PROTECTION DEVICE AND METHOD

Simplified Explanation

The abstract describes an IC device with first and second CMOS structures in n-type doped regions of a substrate, including common gate and drain terminals, body and source contacts for nMOS and pMOS transistors, and electrical connections between the terminals and contacts via a diode.

• Explanation of the patent/innovation:

 * IC device with CMOS structures in n-type doped regions
 * Common gate and drain terminals for the CMOS structures
 * Body and source contacts for nMOS and pMOS transistors
 * Electrical connections between terminals and contacts via a diode
 * Connections positioned between substrate and a metal layer

1. 1. 1. Potential Applications

This technology can be applied in integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.

1. 1. 1. Problems Solved

This technology helps in improving the performance and efficiency of integrated circuits by providing a unique structure for CMOS devices.

1. 1. 1. Benefits

• Enhanced performance of integrated circuits
• Improved efficiency and reliability
• Compact design for space-saving in electronic devices

1. 1. 1. Potential Commercial Applications
         1. Optimizing IC Device Performance for Electronic Devices

1. 1. 1. Possible Prior Art

There may be prior art related to CMOS structures and electrical connections in integrated circuits, but specific examples are not provided in the abstract.

1. 1. 1. 1. Unanswered Questions
         2. How does the diode in the clamp device contribute to the overall functionality of the IC device?

The diode in the clamp device helps in providing a path for current flow between the drain and gate terminals, enhancing the stability and protection of the CMOS structures.

1. 1. 1. 1. What are the specific advantages of positioning the electrical connections between the substrate and the metal layer in the IC device?

Positioning the connections in this way helps in reducing interference and improving the overall performance and reliability of the integrated circuit by minimizing signal loss and noise.

Original Abstract Submitted

an ic device includes first and second cmos structures positioned in n-type doped regions of a substrate, the first cmos structure including a common gate terminal, first nmos body and source contacts, and first pmos body and source contacts, the second cmos structure including a common drain terminal, second nmos body and source contacts, and second pmos body and source contacts. the ic device includes a first electrical connection from the common drain terminal to the common gate terminal, a clamp device including a diode, a second electrical connection from a cathode of the diode to the first pmos body and source contacts, and a third electrical connection from an anode of the of the diode to the first nmos body and source contacts, and entireties of each of the second and third electrical connections are positioned between the substrate and a third metal layer of the ic device.