Taiwan semiconductor manufacturing company, ltd. (20240113225). SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Wu-Wei Tsai of Taoyuan City (TW)

Yan-Yi Chen of Taipei City (TW)

Hai-Ching Chen of Hsinchu City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Chung-Te Lin of Tainan City (TW)

SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113225 titled 'SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

Simplified Explanation

The semiconductor device described in the abstract includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature, and a second source/drain feature. The gate insulating layer is positioned between the gate and the semiconductor structure, which comprises at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is situated between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.

• The semiconductor device includes a gate, semiconductor structure, gate insulating layer, and source/drain features.
• The semiconductor structure consists of metal oxide layers and an oxide layer.
• The source/drain features are electrically connected to the semiconductor structure.

Potential Applications

The technology described in this patent application could be applied in the following areas:

• Semiconductor manufacturing
• Electronics industry
• Integrated circuits

Problems Solved

This technology helps in addressing the following issues:

• Enhancing semiconductor device performance
• Improving electrical connectivity
• Increasing efficiency in electronic devices

Benefits

The semiconductor device described in the patent application offers the following benefits:

• Improved functionality
• Enhanced electrical properties
• Increased reliability

Potential Commercial Applications

The technology outlined in this patent application has potential commercial applications in:

• Semiconductor companies
• Electronics manufacturers
• Research and development firms

Possible Prior Art

One possible prior art related to this technology is the use of metal oxide layers in semiconductor devices to improve performance and reliability.

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency.

What are the specific manufacturing processes involved in creating this semiconductor device?

The article does not delve into the specific manufacturing processes used to create this semiconductor device.

Original Abstract Submitted

a semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. the gate insulating layer is located between the gate and the semiconductor structure. the semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. the first oxide layer is located between the first metal oxide layer and the second metal oxide layer. the first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.