US Patent Application 18350838. Doping for Semiconductor Device with Conductive Feature simplified abstract

Doping for Semiconductor Device with Conductive Feature

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Su-Hao Liu of Jhongpu Township (TW)

Huicheng Chang of Tainan City (TW)

Chia-Cheng Chen of Hsinchu (TW)

Liang-Yin Chen of Hsinchu (TW)

Kuo-Ju Chen of Taichung City (TW)

Chun-Hung Wu of New Taipei City (TW)

Chang-Miao Liu of Hsinchu (TW)

Huai-Tei Yang of Hsinchu (TW)

Lun-Kuang Tan of Hsinchu (TW)

Wei-Ming You of Taipei City (TW)

Doping for Semiconductor Device with Conductive Feature - A simplified explanation of the abstract

This abstract first appeared for US patent application 18350838 titled 'Doping for Semiconductor Device with Conductive Feature

Simplified Explanation

The patent application is about doping for conductive features in a semiconductor device.

• The structure described in the patent includes an active region of a transistor.
• The active region has a source/drain region, which is defined by a first dopant with a certain concentration.
• The source/drain region also contains a second dopant with a concentration profile that remains consistent from the surface to the depth of the region.
• The consistent concentration of the second dopant is higher than the concentration of the first dopant.
• The structure also includes a conductive feature that makes contact with the source/drain region at its surface.

Original Abstract Submitted

The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.