US Patent Application 18361185. IC INCLUDING STANDARD CELLS AND SRAM CELLS simplified abstract

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IC INCLUDING STANDARD CELLS AND SRAM CELLS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Jhon-Jhy Liaw of Zhudong Township (TW)]]

IC INCLUDING STANDARD CELLS AND SRAM CELLS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361185 titled 'IC INCLUDING STANDARD CELLS AND SRAM CELLS

Simplified Explanation

The patent application describes an integrated circuit that includes two arrays: a standard cell array and a SRAM cell array.

  • The standard cell array consists of standard cells with P-type transistors arranged in a column, sharing a fin structure.
  • The SRAM cell array consists of SRAM cells with P-type transistors arranged in another column, each sharing a fin structure with adjacent transistors in adjacent cells.
  • The fin structure material in the standard cell array is different from the fin structure material in the SRAM cell array.
  • The dimension of the fin structure in the standard cell array is larger along its column compared to the dimension of each fin structure in the SRAM cell array.


Original Abstract Submitted

An integrated circuits (IC) includes a standard cell array and a SRAM cell array. The standard cell array includes standard cells having first P-type transistors arranged in a first column of the standard cell array and a first fin structure shared by the first P-type transistors. The SRAM cell array includes SRAM cells having second P-type transistors arranged in a second column of the SRAM cell array and second fin structures arranged in the second column. Each of the second fin structures is shared by two adjacent second P-type transistors respectively disposed in two adjacent SRAM cells. A material of the first fin structure is different from a material of the second fin structures. A dimension of the first fin structure along the first column is greater than a dimension of each of the second fin structures along the second column.

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