Taiwan semiconductor manufacturing co., ltd. (20240096961). Source/Drain Metal Contact and Formation Thereof simplified abstract
Contents
- 1 Source/Drain Metal Contact and Formation Thereof
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Source/Drain Metal Contact and Formation Thereof - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Source/Drain Metal Contact and Formation Thereof
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Shih-Chuan Chiu of Hsinchu (TW)
Tien-Lu Lin of Hsinchu City (TW)
Yu-Ming Lin of Hsinchu City (TW)
Chia-Hao Chang of Hsinchu City (TW)
Jia-Chuan You of Taoyuan County (TW)
Source/Drain Metal Contact and Formation Thereof - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096961 titled 'Source/Drain Metal Contact and Formation Thereof
Simplified Explanation
The abstract describes a contact stack for a semiconductor device that includes a source/drain feature, a silicide layer wrapping around the source/drain feature, a seed metal layer in direct contact with the silicide layer, and a conductor in contact with the seed metal layer. Importantly, the contact stack does not include a metal nitride layer in direct contact with the silicide layer.
- Source/drain feature included in the contact stack
- Silicide layer wraps around the source/drain feature
- Seed metal layer in direct contact with the silicide layer
- Conductor in contact with the seed metal layer
- Excludes a metal nitride layer in direct contact with the silicide layer
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as microprocessors, memory chips, and other integrated circuits.
Problems Solved
This innovation helps to improve the performance and reliability of semiconductor devices by providing a more efficient and reliable contact stack structure.
Benefits
The benefits of this technology include enhanced electrical conductivity, improved thermal stability, and reduced resistance in the contact stack of semiconductor devices.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for the production of high-performance electronic devices.
Possible Prior Art
One possible prior art could be the use of metal nitride layers in contact stacks of semiconductor devices to improve conductivity and reliability. However, the exclusion of a metal nitride layer in direct contact with the silicide layer distinguishes this innovation from existing technologies.
Unanswered Questions
How does the absence of a metal nitride layer impact the overall performance of the semiconductor device?
The article does not provide specific details on how the absence of a metal nitride layer affects the performance of the semiconductor device.
Are there any potential drawbacks or limitations to this contact stack design?
The article does not address any potential drawbacks or limitations that may arise from the specific configuration of the contact stack described.
Original Abstract Submitted
a contact stack of a semiconductor device includes a source/drain feature, a silicide layer wrapping around the source/drain feature, a seed metal layer in direct contact with the silicide layer, and a conductor in contact with the seed metal layer. the contact stack excludes a metal nitride layer in direct contact with the silicide layer.
