Kabushiki kaisha toshiba (20240096962). SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME
Organization Name
Inventor(s)
Junpei Hisada of Nonoichi Ishikawa (JP)
Hiroaki Katou of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096962 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes multiple semiconductor regions, a gate electrode, and two electrodes. The device is designed with specific impurity concentrations in different regions to achieve desired electrical properties.
- The device includes first to fourth semiconductor regions with varying impurity concentrations.
- The gate electrode is positioned to control the flow of current in the device.
- The second electrode contacts multiple semiconductor regions and includes a connection part for specific electrical contact.
Potential Applications
This semiconductor device could be used in various electronic applications where precise control of current flow is required, such as in power electronics, sensors, and communication devices.
Problems Solved
This technology solves the problem of achieving specific electrical properties in a semiconductor device by carefully designing the impurity concentrations in different regions.
Benefits
The benefits of this technology include improved performance and efficiency in electronic devices, as well as the ability to customize the electrical properties of the semiconductor device for specific applications.
Potential Commercial Applications
Potential commercial applications of this technology include power electronics, sensor devices, communication devices, and other electronic systems where precise control of current flow is essential.
Possible Prior Art
One possible prior art for this technology could be the development of semiconductor devices with specific impurity concentrations in different regions to control electrical properties. Research in the field of semiconductor physics and device engineering may have contributed to similar innovations in the past.
Unanswered Questions
How does the impurity concentration affect the overall performance of the semiconductor device?
The abstract mentions different impurity concentrations in various semiconductor regions. It would be interesting to explore how these concentrations impact the device's electrical properties and performance.
What specific applications could benefit the most from this semiconductor device design?
While the abstract mentions potential applications like power electronics and sensors, it would be valuable to delve deeper into specific industries or technologies that could see significant advantages from implementing this semiconductor device design.
Original Abstract Submitted
according to one embodiment, a semiconductor device includes a first electrode, first to fourth semiconductor regions, a gate electrode, and a second electrode. the third semiconductor region is located on a portion of the second semiconductor region. the fourth semiconductor region includes a first portion positioned on the third semiconductor region and a second portion arranged with the first portion in a second direction. a first-conductivity-type impurity concentration of the first portion is less than a first-conductivity-type impurity concentration of the second portion. the gate electrode faces the second semiconductor region via a gate insulating layer in the second direction. the second electrode is located on the second and fourth semiconductor regions. the second electrode contacts the first and second portions. the second electrode includes a connection part that contacts the third semiconductor region and the portion of the second semiconductor region in the second direction.
