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Category:G11C16/26
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Pages in category "G11C16/26"
The following 123 pages are in this category, out of 123 total.
1
- 17461278. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17742874. NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17742879. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17750315. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17830677. STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17830800. CROSS-TEMPERATURE COMPENSATION IN NON-VOLATILE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17831350. MEMORY BLOCK CHARACTERISTIC DETERMINATION simplified abstract (Micron Technology, Inc.)
- 17836453. PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17837345. OPEN BLOCK BOUNDARY GROUP PROGRAMMING FOR NON-VOLATILE MEMORY simplified abstract (Western Digital Technologies, Inc.)
- 17838481. Storage System and Method for Inference of Read Thresholds Based on Memory Parameters and Conditions simplified abstract (Western Digital Technologies, Inc.)
- 17842278. ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17847545. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852057. METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852129. NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING simplified abstract (Western Digital Technologies, Inc.)
- 17854163. MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17856691. ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17860690. MANAGING COMPENSATION FOR CHARGE COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17860701. MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY simplified abstract (Micron Technology, Inc.)
- 17876346. MEMORY CELL VOLTAGE LEVEL SELECTION simplified abstract (Micron Technology, Inc.)
- 17881039. MEMORY DEVICE INCLUDING VERTICAL CHANNEL STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 17881352. MEMORY DEVICE FOR CONTROLLING WORD LINE VOLTAGE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17884107. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES USING SEGMENTATION simplified abstract (Micron Technology, Inc.)
- 17887348. INDEPENDENT SENSING TIMES simplified abstract (Micron Technology, Inc.)
- 17888298. STORING BITS WITH CELLS IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17893476. STORAGE CONTROLLER USING HISTORY DATA, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17894398. CODING TO DECREASE ERROR RATE DISCREPANCY BETWEEN PAGES simplified abstract (Micron Technology, Inc.)
- 17895886. READ COUNTER ADJUSTMENT FOR DELAYING READ DISTURB SCANS simplified abstract (Micron Technology, Inc.)
- 17898604. MEMORY DEVICES INCLUDING LOGIC NON-VOLATILE MEMORY simplified abstract (Micron Technology, Inc.)
- 17898733. MEMORY DEVICE AND METHOD FOR OPERATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17931935. SUSPENDING MEMORY ERASE OPERATIONS TO PERFORM HIGHER PRIORITY MEMORY COMMANDS simplified abstract (Micron Technology, Inc.)
- 17938153. APPARATUS WITH READ LEVEL MANAGEMENT AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17940945. Weight Calibration Check for Integrated Circuit Devices having Analog Inference Capability simplified abstract (Micron Technology, Inc.)
- 17941831. ADAPTIVE PRE-READ MANAGEMENT IN MULTI-PASS PROGRAMMING simplified abstract (Micron Technology, Inc.)
- 17942977. READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17956225. STORAGE CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17961048. SOLID STATE DRIVE (SSD) AND OPERATING METHOD simplified abstract (Samsung Electronics Co., Ltd.)
- 17972224. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18057386. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18058555. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18067224. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND READ METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18068337. STORAGE DEVICES AND METHODS OF OPERATING STORAGE DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18099808. NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING READ OPERATION OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18103496. NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18151734. AUTOMATIC PROGRAM VOLTAGE SELECTION NETWORK simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18170893. NON-VOLATILE MEMORY DEVICE DETERMINING READ RECLAIM, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18176347. FLASH MEMORY DEVICE FOR ADJUSTING TRIP VOLTAGE USING VOLTAGE REGULATOR AND SENSING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18177685. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18177877. MEMORY SYSTEM AND METHOD FOR CONTROLLING SEMICONDUCTOR MEMORY simplified abstract (Kioxia Corporation)
- 18183008. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18197258. MEMORY DEVICE INCLUDING PAGE BUFFER CIRCUIT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18215320. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18228291. MEMORY DEVICE PRODUCING METADATA CHARACTERIZING APPLIED READ VOLTAGE LEVEL WITH RESPECT TO VOLTAGE DISTRIBUTIONS simplified abstract (Micron Technology, Inc.)
- 18237309. INTEGRATED FLAG BYTE READ DURING FAILED BYTE COUNT READ COMPENSATION IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18239140. SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CHIP BONDED TO A CMOS CHIP INCLUDING A PERIPHERAL CIRCUIT simplified abstract (Kioxia Corporation)
- 18242061. Data Storage Device and Method for Predicting Future Read Thresholds simplified abstract (Western Digital Technologies, Inc.)
- 18306654. MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18337589. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18337605. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18361132. NONVOLATILE MEMORY INCLUDING ON-DIE-TERMINATION CIRCUIT AND STORAGE DEVICE INCLUDING THE NONVOLATILE MEMORY simplified abstract (Samsung Electronics Co., Ltd.)
- 18362952. MEMORY CIRCUIT AND METHOD OF OPERATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18372949. STORAGE DEVICE AND STORAGE SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18374717. OPERATING METHOD OF A NONVOLATILE MEMORY DEVICE FOR PROGRAMMING MULTI-PAGE DATA simplified abstract (Samsung Electronics Co., Ltd.)
- 18378540. MEMORY DEVICE THAT PERFORMS ERASE OPERATION TO PRESERVE DATA RELIABILITY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18379440. MEMORY DEVICE SENSORS simplified abstract (Micron Technology, Inc.)
- 18450607. MEMORY SYSTEM AND NON-VOLATILE MEMORY simplified abstract (Kioxia Corporation)
- 18455575. MEMORY SYSTEM HAVING A NON-VOLATILE MEMORY AND A CONTROLLER CONFIGURED TO SWITCH A MODE FOR CONTROLLING AN ACCESS OPERATION TO THE NON-VOLATILE MEMORY simplified abstract (Kioxia Corporation)
- 18458071. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18491966. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18504093. MEMORY DEVICE INCLUDING PASS TRANSISTOR CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
- 18522343. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18522829. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18524458. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18524477. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18526634. BLOCK FAMILY-BASED ERROR AVOIDANCE FOR MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18527978. NAND DATA PLACEMENT SCHEMA simplified abstract (Micron Technology, Inc.)
- 18545888. ENHANCED GRADIENT SEEDING SCHEME DURING A PROGRAM OPERATION IN A MEMORY SUB-SYSTEM simplified abstract (Micron Technology, Inc.)
K
- Kioxia corporation (20240094914). MEMORY SYSTEM AND NON-VOLATILE MEMORY simplified abstract
- Kioxia corporation (20240094957). MEMORY SYSTEM simplified abstract
- Kioxia corporation (20240094959). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240096417). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia corporation (20240096419). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240096423). MEMORY SYSTEM simplified abstract
- Kioxia corporation (20240096424). MEMORY DEVICE simplified abstract
- Kioxia corporation (20240096429). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia corporation (20240096430). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia Corporation patent applications on March 21st, 2024
M
- Micron technology, inc. (20240127900). PERFORMING SELECTIVE COPYBACK IN MEMORY DEVICES simplified abstract
- Micron Technology, Inc. patent applications on April 18th, 2024
- Micron Technology, Inc. patent applications on February 15th, 2024
- Micron Technology, Inc. patent applications on February 1st, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- MICRON TECHNOLOGY, INC. patent applications on January 25th, 2024
- Micron Technology, Inc. patent applications on March 14th, 2024
S
- Samsung electronics co., ltd. (20240096420). NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240105268). MEMORY DEVICE INCLUDING PASS TRANSISTOR CIRCUIT simplified abstract
- Samsung electronics co., ltd. (20240126453). NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE simplified abstract
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- Sk hynix inc. (20240120008). NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF simplified abstract
- Sk hynix inc. (20240177779). MEMORY DEVICE, OPERATING METHOD THEREOF, AND VERIFICATION RESULT GENERATOR simplified abstract
- Sk hynix inc. (20240177780). MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE simplified abstract
- Sk hynix inc. (20240177786). PAGE BUFFER, MEMORY DEVICE INCLUDING PAGE BUFFER AND MEMORY SYSTEM INCLUDING MEMORY DEVICE simplified abstract
- SK hynix Inc. patent applications on April 11th, 2024
- SK hynix Inc. patent applications on May 30th, 2024
U
- US Patent Application 17824350. METHOD TO OPTIMIZE FIRST READ VERSUS SECOND READ MARGIN BY SWITCHING BOOST TIMING simplified abstract
- US Patent Application 17825337. NON-VOLATILE MEMORY WITH INTER-DIE CONNECTION simplified abstract
- US Patent Application 17825439. PARTIAL BLOCK HANDLING PROTOCOL IN A NON-VOLATILE MEMORY DEVICE simplified abstract
- US Patent Application 17826434. TEMPERATURE DEPENDENT PROGRAMMING TECHNIQUES IN A MEMORY DEVICE simplified abstract
- US Patent Application 17828685. NON-VOLATILE MEMORY WITH ENGINEERED CHANNEL GRADIENT simplified abstract
- US Patent Application 17860701. MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY simplified abstract
- US Patent Application 18232539. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract
- US Patent Application 18357769. SERIES OF PARALLEL SENSING OPERATIONS FOR MULTI-LEVEL CELLS simplified abstract
- US Patent Application 18362201. SYSTEM AND METHOD FOR RELIABLE SENSING OF MEMORY CELLS simplified abstract
- US Patent Application 18362934. METHOD OF TESTING A MEMORY CIRCUIT AND MEMORY CIRCUIT simplified abstract
- US Patent Application 18450241. Non-Volatile Memory Device and Method of Operating the Same simplified abstract