18103496. NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
Contents
- 1 NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this method compare to traditional methods of programming non-volatile memory devices?
- 1.11 What are the potential limitations or challenges of implementing this operating method in practical memory devices?
- 1.12 Original Abstract Submitted
NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF
Organization Name
Inventor(s)
Hyung Jin Choi of Gyeonggi-do (KR)
Chan Hui Jeong of Gyeonggi-do (KR)
NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18103496 titled 'NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF
Simplified Explanation
The operating method of a non-volatile memory device involves performing program operations on multiple selection transistors in cell strings, followed by verification operations and storing results in data latch circuits.
- Program operations are simultaneously performed on selection transistors in cell strings.
- Verification operations are sequentially performed on groups of selection transistors.
- Results of verification operations are stored in data latch circuits within page buffers.
Potential Applications
This technology could be applied in various memory storage devices, such as solid-state drives, USB flash drives, and memory cards.
Problems Solved
This method helps improve the efficiency and speed of program and verification operations in non-volatile memory devices.
Benefits
- Faster program and verification operations - Enhanced reliability and performance of memory devices
Potential Commercial Applications
Optimizing the operation of non-volatile memory devices can lead to improved products in the consumer electronics industry, data storage solutions, and cloud computing services.
Possible Prior Art
One possible prior art could be the method of sequentially performing program and verification operations in non-volatile memory devices, but the simultaneous operation on multiple selection transistors is a unique aspect of this innovation.
Unanswered Questions
How does this method compare to traditional methods of programming non-volatile memory devices?
This article does not provide a direct comparison to traditional methods, leaving the reader to wonder about the specific advantages of this new approach.
What are the potential limitations or challenges of implementing this operating method in practical memory devices?
The article does not address any potential obstacles or difficulties that may arise when implementing this method in real-world applications, leaving room for speculation on the feasibility of this innovation.
Original Abstract Submitted
An operating method of a non-volatile memory device includes simultaneously performing a program operation on a plurality of selection transistors included in a plurality of cell strings each including a corresponding selection transistor of the selection transistors and a plurality of memory cells, each of the cell strings being coupled between a common source line and a corresponding bit line of a plurality of bit lines; sequentially performing verification operations on respective groups of the selection transistors, the groups being coupled to respective selection lines; and sequentially storing results of the verification operations into respective data latch circuits within each of a plurality of page buffers coupled to the bit lines.
