17860701. MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY simplified abstract (Micron Technology, Inc.)
MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY
Organization Name
Inventor(s)
Mustafa N. Kaynak of San Diego CA (US)
Patrick R. Khayat of San Diego CA (US)
Sivagnanam Parthasarathy of Carlsbad CA (US)
MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17860701 titled 'MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY
Simplified Explanation
The abstract of this patent application describes a method for determining the dependence of memory cells on adjacent cells in a memory device. The method involves calculating a metric for each memory cell that reflects its sensitivity to changes in the threshold voltage of neighboring cells. Based on these metrics, an aggregate measure of adjacent cell dependence is determined for each wordline. This measure is then compared to a threshold value to identify wordline groups with high and low adjacent cell dependence. A record is created to store the location of wordlines with low dependence on adjacent cells.
- The patent application describes a method for analyzing the sensitivity of memory cells to changes in the threshold voltage of neighboring cells.
- The method calculates a metric for each memory cell to determine its sensitivity to adjacent cell threshold voltage changes.
- An aggregate measure of adjacent cell dependence is determined for each wordline based on the calculated metrics.
- The aggregate measure is compared to a threshold value to identify wordline groups with high and low adjacent cell dependence.
- A record is created to store the location of wordlines with low dependence on adjacent cells.
Potential Applications
This technology can be applied in various areas where memory devices are used, such as:
- Semiconductor manufacturing: The method can be used to optimize the design and production of memory devices, leading to improved performance and reliability.
- Data storage: By identifying wordlines with low adjacent cell dependence, the method can help in designing more robust and efficient memory systems.
- Computer hardware: The technology can be integrated into computer systems to enhance memory management and improve overall system performance.
Problems Solved
The technology addresses the following problems:
- Memory cell sensitivity: By determining the sensitivity of memory cells to changes in adjacent cell threshold voltages, the method helps identify potential issues that can affect memory performance and reliability.
- Wordline optimization: By identifying wordlines with low adjacent cell dependence, the method allows for the optimization of memory systems, reducing the impact of neighboring cells on memory operations.
- Manufacturing efficiency: The method enables more efficient manufacturing processes by providing insights into the dependence of memory cells on adjacent cells, allowing for targeted improvements and optimizations.
Benefits
The technology offers the following benefits:
- Improved memory performance: By optimizing wordline groups based on adjacent cell dependence, memory systems can operate more efficiently and reliably.
- Enhanced memory reliability: Identifying and addressing potential issues related to adjacent cell dependence can improve the overall reliability and lifespan of memory devices.
- Manufacturing cost savings: By providing insights into memory cell dependence, the method enables targeted improvements in manufacturing processes, reducing costs and improving yield.
Original Abstract Submitted
Embodiments disclosed can include determining, for each memory cell connected to each wordline, a respective value of a metric that reflects a sensitivity of a threshold voltage associated with the memory cell to a change in a threshold voltage of an adjacent cell and determining, for each wordline, based on the determined sensitivity for each memory cell, a respective aggregate measure of adjacent cell dependence. They can further include comparing the determined aggregate measure of adjacent cell dependence to a threshold dependence value. They can also include identifying a first wordline group having wordlines with high adjacent cell dependence and a second wordline group having wordlines with low adjacent cell dependence and storing a record referencing the wordlines of the second wordline group, the record indicating a corresponding location on the die of the memory device.
