Sk hynix inc. (20240120008). NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF simplified abstract
Contents
- 1 NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF
Organization Name
Inventor(s)
Hyung Jin Choi of Gyeonggi-do (KR)
Chan Hui Jeong of Gyeonggi-do (KR)
NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120008 titled 'NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF
Simplified Explanation
The operating method of a non-volatile memory device involves simultaneously programming a plurality of selection transistors in cell strings, performing verification operations on groups of selection transistors, and storing results in data latch circuits within page buffers.
- Program operation on multiple selection transistors in cell strings
- Verification operations on groups of selection transistors
- Storing results in data latch circuits within page buffers
Potential Applications
The technology can be applied in various fields such as data storage, embedded systems, and semiconductor manufacturing.
Problems Solved
1. Efficient programming of multiple selection transistors simultaneously 2. Sequential verification operations for reliability and accuracy
Benefits
1. Faster programming and verification processes 2. Improved reliability and accuracy of data storage
Potential Commercial Applications
"Non-Volatile Memory Device Operating Method" in Semiconductor Industry
Possible Prior Art
Prior art may include similar methods for programming and verifying non-volatile memory devices, such as parallel programming techniques.
Unanswered Questions
How does this method compare to traditional sequential programming methods in terms of speed and efficiency?
The article does not provide a direct comparison between this simultaneous programming method and traditional sequential programming methods.
Are there any limitations to the number of selection transistors that can be programmed simultaneously using this method?
The article does not mention any limitations on the number of selection transistors that can be programmed simultaneously.
Original Abstract Submitted
an operating method of a non-volatile memory device includes simultaneously performing a program operation on a plurality of selection transistors included in a plurality of cell strings each including a corresponding selection transistor of the selection transistors and a plurality of memory cells, each of the cell strings being coupled between a common source line and a corresponding bit line of a plurality of bit lines; sequentially performing verification operations on respective groups of the selection transistors, the groups being coupled to respective selection lines; and sequentially storing results of the verification operations into respective data latch circuits within each of a plurality of page buffers coupled to the bit lines.
