US Patent Application 18362201. SYSTEM AND METHOD FOR RELIABLE SENSING OF MEMORY CELLS simplified abstract
Contents
SYSTEM AND METHOD FOR RELIABLE SENSING OF MEMORY CELLS
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Jaw-Juinn Horng of Hsinchu (TW)
SYSTEM AND METHOD FOR RELIABLE SENSING OF MEMORY CELLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18362201 titled 'SYSTEM AND METHOD FOR RELIABLE SENSING OF MEMORY CELLS
Simplified Explanation
The patent application describes a memory system with a memory cell and a circuit to operate the memory cell.
- The circuit includes a pair of transistors that connect the memory cell to the bit line.
- The transistors can either connect a voltage source to supply a reference voltage to the memory cell or connect a sensor to measure the current through the memory cell.
- The circuit also includes a first transistor that is connected in series with the bit line and the memory cell.
Original Abstract Submitted
Disclosed herein are related to a memory system including a memory cell and a circuit to operate the memory cell. In one aspect, the circuit includes a pair of transistors to electrically couple, to the bit line, a selected one of i) a voltage source to supply a reference voltage to the memory cell or ii) a sensor to sense a current through the memory cell. In one aspect, the circuit includes a first transistor. The first transistor and the bit line may be electrically coupled between the pair of transistors and the memory cell in series.
