Samsung electronics co., ltd. (20240105268). MEMORY DEVICE INCLUDING PASS TRANSISTOR CIRCUIT simplified abstract

MEMORY DEVICE INCLUDING PASS TRANSISTOR CIRCUIT

Organization Name

samsung electronics co., ltd.

Inventor(s)

Seungyeon Kim of Seoul (KR)

Daeseok Byeon of Seongnam-si (KR)

Pansuk Kwak of Goyang-si (KR)

Hongsoo Jeon of Suwon-si (KR)

MEMORY DEVICE INCLUDING PASS TRANSISTOR CIRCUIT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105268 titled 'MEMORY DEVICE INCLUDING PASS TRANSISTOR CIRCUIT

Simplified Explanation

The memory device described in the abstract includes a memory cell array with two memory blocks, driving signal lines corresponding to word lines, and a pass transistor circuit with an odd number of pass transistor groups connected between the driving signal lines and the memory cell array.

• The memory device has a memory cell array with two memory blocks.
• The driving signal lines are connected to vertically stacked word lines.
• The pass transistor circuit includes an odd number of pass transistor groups.
• Each pass transistor group includes a first pass transistor connected between a word line of the first memory block and a driving signal line, and a second pass transistor connected between a word line of the second memory block and the adjacent driving signal line.

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1. 1. 1. Potential Applications

This technology could be applied in:

• Solid-state drives
• Embedded systems
• High-performance computing

1. 1. 1. Problems Solved

This technology addresses issues such as:

• Improving memory access speed
• Enhancing memory density
• Reducing power consumption

1. 1. 1. Benefits

The benefits of this technology include:

• Faster data retrieval
• Increased storage capacity
• Lower energy consumption

1. 1. 1. Potential Commercial Applications

The potential commercial applications of this technology are:

• Data centers
• Consumer electronics
• Automotive systems

1. 1. 1. Possible Prior Art

One possible prior art for this technology is the use of pass transistor circuits in memory devices to improve access speed and reduce power consumption.

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1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing memory devices in terms of speed and efficiency?

This article does not provide a direct comparison with existing memory devices to evaluate its speed and efficiency.

1. 1. 1. 1. What are the potential challenges in implementing this technology on a large scale?

The article does not address the potential challenges that may arise in implementing this technology on a large scale, such as manufacturing complexity or cost implications.

Original Abstract Submitted

a memory device includes: a memory cell array including a first memory block and a second memory block adjacently disposed in a first direction, driving signal lines respectively corresponding to vertically stacked word lines, and a pass transistor circuit including an odd number of pass transistor groups and connected between the driving signal lines and the memory cell array. one of the odd number of pass transistor groups includes a first pass transistor connected between a first word line of the first memory block and a first driving signal line among the driving signal lines, and a second pass transistor connected between a first word line of the second memory block and the first driving signal line adjacently disposed to the first pass transistor in a second direction.