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Category:G11C16/34
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Pages in category "G11C16/34"
The following 98 pages are in this category, out of 98 total.
1
- 17461278. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17706097. NONVOLATILE MEMORY AND STORAGE DEVICE INCLUDING SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17744942. SEMICONDUCTOR DEVICE PERFORMING BLOCK PROGRAM AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 17806103. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17817408. MEMORY DEVICE AND PROGRAM METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17819826. DETECTING A MEMORY WRITE RELIABILITY RISK WITHOUT USING A WRITE VERIFY OPERATION simplified abstract (Micron Technology, Inc.)
- 17820280. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17830800. CROSS-TEMPERATURE COMPENSATION IN NON-VOLATILE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17831266. CELL VOLTAGE DROP COMPENSATION CIRCUIT simplified abstract (Micron Technology, Inc.)
- 17837345. OPEN BLOCK BOUNDARY GROUP PROGRAMMING FOR NON-VOLATILE MEMORY simplified abstract (Western Digital Technologies, Inc.)
- 17838481. Storage System and Method for Inference of Read Thresholds Based on Memory Parameters and Conditions simplified abstract (Western Digital Technologies, Inc.)
- 17842278. ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17847545. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852129. NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING simplified abstract (Western Digital Technologies, Inc.)
- 17856691. ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17860690. MANAGING COMPENSATION FOR CHARGE COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17860701. MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY simplified abstract (Micron Technology, Inc.)
- 17860711. MANAGING PROGRAM VERIFY VOLTAGE OFFSETS FOR CHARGE COUPLING AND LATERAL MIGRATION COMPENSATION IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17866904. NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17874828. RELIABILITY BASED DATA VERIFICATION simplified abstract (Micron Technology, Inc.)
- 17875827. APPARATUS WITH CIRCUIT MANAGEMENT MECHANISM AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17881009. MEMORY DEVICE AND METHOD FOR DETERMINING START POINT AND END POINT OF VERIFICATION OPERATION OF TARGET STATE DURING PROGRAMMING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17884107. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES USING SEGMENTATION simplified abstract (Micron Technology, Inc.)
- 17884113. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC simplified abstract (Micron Technology, Inc.)
- 17887244. VOLTAGE WINDOW ADJUSTMENT simplified abstract (Micron Technology, Inc.)
- 17893476. STORAGE CONTROLLER USING HISTORY DATA, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17893755. ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS simplified abstract (Micron Technology, Inc.)
- 17894248. APPARATUS AND METHODS FOR PROGRAMMING DATA STATES OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 17894528. ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17895886. READ COUNTER ADJUSTMENT FOR DELAYING READ DISTURB SCANS simplified abstract (Micron Technology, Inc.)
- 17897441. MANAGING DEFECTIVE BLOCKS DURING MULTI-PLANE PROGRAMMING OPERATIONS IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17898043. NAND DETECT EMPTY PAGE SCAN simplified abstract (Micron Technology, Inc.)
- 17899409. TWO-PASS CORRECTIVE PROGRAMMING FOR MEMORY CELLS THAT STORE MULTIPLE BITS AND POWER LOSS MANAGEMENT FOR TWO-PASS CORRECTIVE PROGRAMMING simplified abstract (Micron Technology, Inc.)
- 17939021. STORAGE SYSTEM AND OPERATING METHOD OF STORAGE CONTROLLER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17948556. DRIFT COMPENSATION FOR CODEWORDS IN MEMORY simplified abstract (Micron Technology, Inc.)
- 17953003. FLASH MEMORY DEVICE AND DATA RECOVER READ METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17955858. OPERATION METHOD OF MEMORY DEVICE AND OPERATION METHOD OF MEMORY SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17958386. NONVOLATILE MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17960346. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17982550. MEMORY DEVICE FOR DETECTING FAIL CELL AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17983705. SEMICONDUCTOR DEVICE FOR IMPROVING RETENTION PERFORMANCE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18057386. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18079433. OPERATION METHOD OF NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18088046. NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18103496. NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18103754. NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME AND PROGRAM METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18177685. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18204189. ADAPTIVE CALIBRATION FOR THRESHOLD VOLTAGE OFFSET BINS simplified abstract (Micron Technology, Inc.)
- 18233420. CORRECTIVE PROGRAM VERIFY OPERATION WITH IMPROVED READ WINDOW BUDGET RETENTION simplified abstract (Micron Technology, Inc.)
- 18237309. INTEGRATED FLAG BYTE READ DURING FAILED BYTE COUNT READ COMPENSATION IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18238212. NONVOLATILE MEMORY DEVICE, OPERATION METHOD OF A NONVOLATILE MEMORY DEVICE, AND OPERATION METHOD OF A CONTROLLER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18239193. MEMORY DEVICES WITH PROGRAM VERIFY LEVELS BASED ON COMPENSATION VALUES simplified abstract (Micron Technology, Inc.)
- 18242061. Data Storage Device and Method for Predicting Future Read Thresholds simplified abstract (Western Digital Technologies, Inc.)
- 18337589. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18356522. NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING DEFECTIVE MEMORY CELL BLOCK OF NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18388342. MANAGING WRITE DISTURB BASED ON IDENTIFICATION OF FREQUENTLY-WRITTEN MEMORY UNITS simplified abstract (Micron Technology, Inc.)
- 18452020. WEAR LEVELING IN SOLID STATE DRIVES simplified abstract (Micron Technology, Inc.)
- 18458071. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18459745. STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18491966. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18509301. DATA STORAGE DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18522829. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18524458. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18527978. NAND DATA PLACEMENT SCHEMA simplified abstract (Micron Technology, Inc.)
B
K
- Kioxia corporation (20240096419). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240096422). STORAGE DEVICE simplified abstract
- Kioxia corporation (20240096423). MEMORY SYSTEM simplified abstract
- Kioxia corporation (20240096429). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia corporation (20240096430). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia Corporation patent applications on March 21st, 2024
M
- Micron technology, inc. (20240127900). PERFORMING SELECTIVE COPYBACK IN MEMORY DEVICES simplified abstract
- Micron Technology, Inc. patent applications on April 18th, 2024
- Micron Technology, Inc. patent applications on February 15th, 2024
- Micron Technology, Inc. patent applications on February 1st, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 8th, 2024
- MICRON TECHNOLOGY, INC. patent applications on January 25th, 2024
S
- Samsung electronics co., ltd. (20240096420). NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240105250). SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- Sk hynix inc. (20240120008). NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF simplified abstract
- SK hynix Inc. patent applications on April 11th, 2024
U
- US Patent Application 17752590. ADAPTIVE POROGRAMMING DELAY SCHEME IN A MEMORY SUB-SYSTEM simplified abstract
- US Patent Application 17824384. MEDIA MANAGEMENT simplified abstract
- US Patent Application 17825439. PARTIAL BLOCK HANDLING PROTOCOL IN A NON-VOLATILE MEMORY DEVICE simplified abstract
- US Patent Application 17826434. TEMPERATURE DEPENDENT PROGRAMMING TECHNIQUES IN A MEMORY DEVICE simplified abstract
- US Patent Application 17828685. NON-VOLATILE MEMORY WITH ENGINEERED CHANNEL GRADIENT simplified abstract
- US Patent Application 17860701. MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY simplified abstract
- US Patent Application 17887244. VOLTAGE WINDOW ADJUSTMENT simplified abstract
- US Patent Application 18232386. METHODS OF CONFIGURING A MEMORY simplified abstract
- US Patent Application 18232539. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract
- US Patent Application 18450241. Non-Volatile Memory Device and Method of Operating the Same simplified abstract
- US Patent Application 18452020. WEAR LEVELING IN SOLID STATE DRIVES simplified abstract