18204189. ADAPTIVE CALIBRATION FOR THRESHOLD VOLTAGE OFFSET BINS simplified abstract (Micron Technology, Inc.)

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ADAPTIVE CALIBRATION FOR THRESHOLD VOLTAGE OFFSET BINS

Organization Name

Micron Technology, Inc.

Inventor(s)

Vamsi Pavan Rayaprolu of Santa Clara CA (US)

Steven Michael Kientz of Westminster CO (US)

ADAPTIVE CALIBRATION FOR THRESHOLD VOLTAGE OFFSET BINS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18204189 titled 'ADAPTIVE CALIBRATION FOR THRESHOLD VOLTAGE OFFSET BINS

Simplified Explanation

The patent application describes a system that includes a memory device and a processing device. The system performs operations to determine if a program erase cycle count associated with a segment of the memory device meets a certain threshold criterion. If it does, the system performs a calibration measurement of the voltage valley center for each state of each cell in the segment. Based on the result of the calibration measurement, the system updates a threshold voltage offset bin associated with the segment of the memory device.

  • The system determines if a program erase cycle count meets a threshold criterion.
  • If it does, the system performs a calibration measurement of the voltage valley center for each state of each cell in the memory segment.
  • Based on the calibration measurement, the system updates a threshold voltage offset bin associated with the memory segment.

Potential Applications

  • This technology can be applied in various memory devices, such as flash memory, to improve performance and reliability.
  • It can be used in data storage systems to enhance data retention and endurance.

Problems Solved

  • The system solves the problem of maintaining accurate threshold voltage offset bins in memory devices.
  • It addresses the issue of program erase cycle count affecting the performance and reliability of memory devices.

Benefits

  • By updating the threshold voltage offset bins, the system improves the accuracy and efficiency of memory operations.
  • The calibration measurement helps in maintaining the integrity of data stored in memory devices.
  • This technology extends the lifespan of memory devices by optimizing their performance and endurance.


Original Abstract Submitted

A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: determining whether a program erase cycle count associated with a segment of the memory device satisfies a first threshold criterion for triggering an offset bin update; responsive to determining that the program erase cycle count satisfies the first threshold creation, performing a calibration measurement of a center of a voltage valley for each state of each cell in the segment of the memory device; and updating a threshold voltage offset bin associated with the segment of the memory device based on a result of the calibration measurement.

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