18238212. NONVOLATILE MEMORY DEVICE, OPERATION METHOD OF A NONVOLATILE MEMORY DEVICE, AND OPERATION METHOD OF A CONTROLLER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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NONVOLATILE MEMORY DEVICE, OPERATION METHOD OF A NONVOLATILE MEMORY DEVICE, AND OPERATION METHOD OF A CONTROLLER

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Hyejin Yim of Wonju-si (KR)

Sung-Won Yun of Suwon-si (KR)

Il Han Park of Suwon-si (KR)

NONVOLATILE MEMORY DEVICE, OPERATION METHOD OF A NONVOLATILE MEMORY DEVICE, AND OPERATION METHOD OF A CONTROLLER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18238212 titled 'NONVOLATILE MEMORY DEVICE, OPERATION METHOD OF A NONVOLATILE MEMORY DEVICE, AND OPERATION METHOD OF A CONTROLLER

Simplified Explanation

The patent application describes a memory device with a first substrate, peripheral circuit, metal bonding layers, memory cell array, and a second substrate. The peripheral circuit includes a page buffer circuit and a pass/failure checker.

  • The memory device includes a first substrate, peripheral circuit, metal bonding layers, memory cell array, and a second substrate.
  • The page buffer circuit in the peripheral circuit receives a verification result through the metal bonding layers and divides it into stages.
  • The page buffer circuit sequentially outputs the verification result for each stage.
  • The pass/failure checker in the peripheral circuit performs a counting operation on each stage to generate accumulated values.
  • The pass/failure checker compares the accumulated values with a reference value that increases from an initial value.
  • The initial value is set by an external memory controller.

Potential Applications

  • Memory devices with improved verification and counting operations.
  • Enhanced performance and reliability in memory systems.

Problems Solved

  • Simplified verification and counting operations in memory devices.
  • Improved accuracy and efficiency in memory systems.

Benefits

  • Increased reliability and accuracy in memory operations.
  • Simplified design and implementation of memory devices.
  • Enhanced performance and functionality in memory systems.


Original Abstract Submitted

A memory device including a first substrate, a peripheral circuit provided on the first substrate, a first metal bonding layer provided on the peripheral circuit, a second metal bonding layer directly bonded to the first metal bonding layer, a memory cell array provided on the second metal bonding layer; and a second substrate provided on the memory cell array. A page buffer circuit in the peripheral circuit receives a verification result through the metal bonding layers, divides the verification result into stages, and sequentially outputs the verification result for the division into the stages, and a pass/failure checker in the peripheral circuit sequentially performs a counting operation about each of the stages to generate accumulated values, and compares the accumulated values and a reference value which increases from an initial value as the counting operation is performed, and the initial value is set by an external memory controller.