17955858. OPERATION METHOD OF MEMORY DEVICE AND OPERATION METHOD OF MEMORY SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
OPERATION METHOD OF MEMORY DEVICE AND OPERATION METHOD OF MEMORY SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
SANG-WAN Nam of Hwaseong-Si (KR)
OPERATION METHOD OF MEMORY DEVICE AND OPERATION METHOD OF MEMORY SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17955858 titled 'OPERATION METHOD OF MEMORY DEVICE AND OPERATION METHOD OF MEMORY SYSTEM INCLUDING THE SAME
Simplified Explanation
The patent application describes a method for operating a memory device that has multiple memory cells stacked vertically on a substrate. The method involves performing multiple program loops on selected memory cells connected to a specific word line. The program loops are based on different program parameters, including information about program voltage increment, 2-step verify range, and bit line forcing voltage.
- The method involves performing multiple program loops on selected memory cells connected to a specific word line.
- The program loops are based on different program parameters.
- The first program parameter is used for the first to (n-1)-th program loops, while the second program parameter is used for the n-th to k-th program loops.
- The first and second program parameters include information about program voltage increment, 2-step verify range, and bit line forcing voltage.
- The method allows for more efficient programming of the memory cells by adjusting the program parameters based on the specific requirements of the cells.
Potential applications of this technology:
- Memory devices in various electronic devices such as smartphones, tablets, and computers.
- Solid-state drives (SSDs) used in data storage and retrieval systems.
- Embedded memory in microcontrollers and other integrated circuits.
Problems solved by this technology:
- Efficient programming of memory cells in a stacked memory device.
- Optimization of program parameters based on the specific requirements of the memory cells.
- Improved performance and reliability of memory devices.
Benefits of this technology:
- Faster and more efficient programming of memory cells.
- Improved reliability and endurance of memory devices.
- Enhanced performance of electronic devices that use memory devices.
- Cost savings in memory device manufacturing.
Original Abstract Submitted
Disclosed is an operation method of a memory device that includes a plurality of memory cells stacked in a direction perpendicular to a substrate. The method includes performing first to (n−1)-th program loops on selected memory cells connected to a selected word line from among the plurality of memory cells, based on a first program parameter, and after the (n−1)-th program loop is performed, performing n-th to k-th program loops on the selected memory cells, based on a second program parameter different from the first program parameter. Herein, n is an integer greater than 1 and k is an integer greater than or equal to n. The first and second program parameters include information about at least two of a program voltage increment, a 2-step verify range, and a bit line forcing voltage used in the first to k-th program loops.
