17881009. MEMORY DEVICE AND METHOD FOR DETERMINING START POINT AND END POINT OF VERIFICATION OPERATION OF TARGET STATE DURING PROGRAMMING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
MEMORY DEVICE AND METHOD FOR DETERMINING START POINT AND END POINT OF VERIFICATION OPERATION OF TARGET STATE DURING PROGRAMMING
Organization Name
Inventor(s)
Wontaeck Jung of Hwaseong-si (KR)
Jaehyuk Yang of Changwon-si (KR)
Jinwoo Yang of Hwaseong-si (KR)
MEMORY DEVICE AND METHOD FOR DETERMINING START POINT AND END POINT OF VERIFICATION OPERATION OF TARGET STATE DURING PROGRAMMING - A simplified explanation of the abstract
This abstract first appeared for US patent application 17881009 titled 'MEMORY DEVICE AND METHOD FOR DETERMINING START POINT AND END POINT OF VERIFICATION OPERATION OF TARGET STATE DURING PROGRAMMING
Simplified Explanation
The patent application describes a memory device and a method for programming it. Here are the key points:
- The memory device uses program loops to adjust the threshold voltages of multiple memory cells to desired target states.
- Each program loop consists of a program section and a verification section.
- The memory cells of a first page are programmed and a number of program loops are used to complete the programming to a first target state.
- The memory cells of a second page, which is adjacent to the first page, are then programmed to the same first target state.
- A verification operation is performed on the second page to ensure the programming was successful.
Potential applications of this technology:
- This memory device and programming method can be used in various electronic devices that require non-volatile memory, such as smartphones, tablets, and computers.
- It can be particularly useful in devices that require high-density memory, as it allows for efficient programming of multiple memory cells.
Problems solved by this technology:
- The use of program loops helps to adjust the threshold voltages of memory cells accurately and reliably, ensuring that they reach the desired target states.
- By programming the memory cells of adjacent pages to the same target state, the method simplifies the programming process and reduces the chances of errors or inconsistencies.
Benefits of this technology:
- The method allows for efficient programming of memory cells, reducing the time and resources required for programming.
- It ensures accurate and reliable programming, leading to improved performance and reliability of the memory device.
- The simplified programming process reduces the chances of errors or inconsistencies, resulting in higher yield and better overall quality of the memory device.
Original Abstract Submitted
A memory device and a method for programming the same may include, applying program loops to a plurality of memory cells of the memory device to adjust threshold voltages of the plurality of memory cells to desired target states, each of the program loops including a program section and a verification section, programming the memory cells of a first page, storing a number of first program loops used to complete the programming of the memory cells of the first page to a first target state, programming the memory cells of a second page to the first target state, the second page adjacent to the first page, and performing a verification operation on the second page.
